Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers

2020 ◽  
Vol 67 (10) ◽  
pp. 4269-4273
Author(s):  
Zhongming Cao ◽  
Ivona Z. Mitrovic ◽  
Ian Sandall
Keyword(s):  
Avalanche Photodiodes ◽  
Leakage Currents ◽  
Dielectric Layers ◽  
High K ◽  
High K Dielectric ◽  
Surface Leakage

High-k Dielectric Layers for Bioelectronic Applications

2008 ◽  
Vol E91-C (12) ◽  
pp. 1894-1898
Author(s):  
D. BORSTLAP ◽  
J. SCHUBERT ◽  
W. ZANDER ◽  
A. OFFENHAUSSER ◽  
S. INGEBRANDT
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

Behaviour of injected electrons in high-k dielectric layers

2006 ◽  
Vol 9 (6) ◽  
pp. 985-988 ◽  
Author(s):  
R. Avichail-Bibi ◽  
A. Kiv ◽  
T. Maximova ◽  
Y. Roizin ◽  
D. Fuks
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers

2003 ◽  
Vol 92 ◽  
pp. 7-10 ◽  
Author(s):  
Martine Claes ◽  
T. Witters ◽  
G. Loriaux ◽  
S. Van Elshocht ◽  
A. Delabie ◽  
...  
Keyword(s):  
Open Circuit Potential ◽  
Screening Method ◽  
Open Circuit ◽  
Potential Analysis ◽  
Fast Screening ◽  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate

2007 ◽  
Vol 995 ◽  
Author(s):  
Sagnik Dey ◽  
Se-Hoon Lee ◽  
Sachin V. Joshi ◽  
Prashant Majhi ◽  
Sanjay K. Banerjee
Keyword(s):  
Metal Gate ◽  
Leakage Currents ◽  
Drive Current ◽  
Fully Depleted ◽  
Low Leakage ◽  
High Drive ◽  
High K ◽  
High K Dielectric

AbstractA MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the fully depleted body and the gate-all-around architecture implemented with a high-κ dielectric and metal gate. At the same time this also allows a high drive current due to mobility enhancements arising from volume inversion of the cantilever channel such that a large ION/IOFF is achieved.

scholarly journals Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

2019 ◽  
Vol 16 (10) ◽  
pp. 671-685 ◽  
Author(s):  
Annelies Delabie ◽  
A. Alian ◽  
Florence Bellenger ◽  
Guy Brammertz ◽  
David P. Brunco ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

scholarly journals Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 849
Author(s):  
Dencho Spassov ◽  
Albena Paskaleva ◽  
Elżbieta Guziewicz ◽  
Vojkan Davidović ◽  
Srboljub Stanković ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Atomic Layer ◽  
Information Storage ◽  
Radiation Tolerance ◽  
Leakage Currents ◽  
High K ◽  
60Co Source ◽  
Retention Characteristics ◽  
High K Materials ◽  
High K Dielectric

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

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