Non-Destructive Characterization and Metrology for Ultra-Thin High-k Dielectric Layers

2003 ◽  
Author(s):  
R. Champaneria
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric ◽  
Non Destructive ◽  
Non Destructive Characterization

High-k Dielectric Layers for Bioelectronic Applications

2008 ◽  
Vol E91-C (12) ◽  
pp. 1894-1898
Author(s):  
D. BORSTLAP ◽  
J. SCHUBERT ◽  
W. ZANDER ◽  
A. OFFENHAUSSER ◽  
S. INGEBRANDT
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

Behaviour of injected electrons in high-k dielectric layers

2006 ◽  
Vol 9 (6) ◽  
pp. 985-988 ◽  
Author(s):  
R. Avichail-Bibi ◽  
A. Kiv ◽  
T. Maximova ◽  
Y. Roizin ◽  
D. Fuks
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers

2003 ◽  
Vol 92 ◽  
pp. 7-10 ◽  
Author(s):  
Martine Claes ◽  
T. Witters ◽  
G. Loriaux ◽  
S. Van Elshocht ◽  
A. Delabie ◽  
...  
Keyword(s):  
Open Circuit Potential ◽  
Screening Method ◽  
Open Circuit ◽  
Potential Analysis ◽  
Fast Screening ◽  
Dielectric Layers ◽  
High K ◽  
High K Dielectric

scholarly journals Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

2019 ◽  
Vol 16 (10) ◽  
pp. 671-685 ◽  
Author(s):  
Annelies Delabie ◽  
A. Alian ◽  
Florence Bellenger ◽  
Guy Brammertz ◽  
David P. Brunco ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

2011 ◽  
Vol 679-680 ◽  
pp. 441-444 ◽  
Author(s):  
Muhammad Usman ◽  
T. Pilvi ◽  
Markku Leskelä ◽  
Adolf Schöner ◽  
Anders Hallén
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Dielectric Layers ◽  
Layer Deposition ◽  
High K ◽  
Current Voltage ◽  
High K Dielectric

Aluminum-based high-k dielectric materials have been studied for their potential use as passivation for SiC devices. Metal-insulator-semiconductor structures were prepared and their dielectric properties were analyzed using capacitance-voltage and current-voltage measurements. Atomic layer deposition was used for the deposition of dielectric layers consisting of AlN with or without a buffer layer of SiO2, and also a stack of alternating AlN and Al2O3 layers. It has been observed that AlN has a polycrystalline structure which provides leakage paths for the current through the grain boundaries. However, adding alternate amorphous layers of Al2O3 prevent this leakage and give better overall dielectric properties. It is also concluded that the breakdown of the dielectric starts from the degradation of the thin interfacial SiO2 layer.

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

2008 ◽  
Vol 92 (6) ◽  
pp. 062906 ◽  
Author(s):  
G. Lupina ◽  
G. Kozłowski ◽  
J. Dabrowski ◽  
Ch. Wenger ◽  
P. Dudek ◽  
...  
Keyword(s):  
Dielectric Layers ◽  
High K ◽  
High K Dielectric
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