Failure Mechanism of a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch: Simulated Analysis and Experimental Results

2018 ◽  
Vol 65 (9) ◽  
pp. 3855-3861 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Ruicheng Qiu ◽  
Xu Fang ◽  
Jingxuan Wang
2015 ◽  
Vol 36 (11) ◽  
pp. 1176-1179 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao

2018 ◽  
Vol 22 (8) ◽  
pp. 2582-2603
Author(s):  
Jiaojiao Xi ◽  
Xiaoyan Liu ◽  
Zhiqiang Yu

The tensile failure mechanism of carbon–aramid hybrid fibers/epoxy sandwich structure laminates was investigated by using experimental and finite element methods. Double curing agents, triarylsulfonium hexafluoroantimonates and triethylene tetramine with a mass ratio of 4:15 were introduced into the laminates. Sandwich structure laminates, with different proportions of hybrid fibers, were cured by UV-initiated anion/cationic dual curing technique. The results showed that the synergetic curing effects of two curing agents were observed under UV irradiation, leading to the better curing of the system, which further plays a positive influence on the mechanical performance. The tensile properties and failure mechanism of the laminates depended on the stacking sequence and fiber volume fractions of the layer structures. The interplay hybrid laminates, containing three alternate plies with fiber contents of 67.7 vol%, presented the optimal tensile performance, and its tensile strength and modulus were 0.82 GPa and 22.09 GPa, respectively. The fracture morphologies revealed that pull-out and debonding of fibers were the main failure mechanism of hybrid laminates. The performance of sandwich structure laminates was determined by the load-carrying capacity of carbon fiber and load-transferring capacity of the aramid fiber and adhesive. The finite element model based on experiments was established to simulate the stress state and failure mechanism of sandwich laminates. The results demonstrated that the stress was better transferred into carbon fibers from the aramid fibers and adhesive, and the relative error rate of maximum stress from finite element analysis and experimental results was less than 5%, which were in reasonable agreement with the experimental results.


2002 ◽  
Vol 16 (28n29) ◽  
pp. 4484-4486
Author(s):  
YUESHENG XU ◽  
CHUNLING ZHANG ◽  
LEI TANG ◽  
CAICHI LIU ◽  
JINGCHEN HAO

The micro-defects in semi-insulating gallium arsenide (SI-GaAs) were investigated by means of chemical etching (ultrasonic aided Abtahams-Buiocchi etching, melting KOH etching), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The experimental results showed that the micro-defects in SI-GaAs are micro-precipitates of As with the size of microns. Micro-defects and dislocations have strong interaction, dislocations absorb the micro-defects and micro-defects decorate on the dislocations.


2009 ◽  
Vol 51 (12) ◽  
pp. 125003 ◽  
Author(s):  
Marcelo Zambra ◽  
Patricio Silva ◽  
Cristian Pavez ◽  
Denisse Pasten ◽  
José Moreno ◽  
...  

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