A Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Delayed Breakdown

2015 ◽  
Vol 36 (11) ◽  
pp. 1176-1179 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao
Keyword(s):  
Gallium Arsenide ◽  
Low Energy ◽  
Semiconductor Switch

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

2014 ◽  
Vol 115 (9) ◽  
pp. 094503 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao ◽  
Xuelin Yuan
Keyword(s):  
Gallium Arsenide ◽  
Semiconductor Switch ◽  
Ultrafast Switching

Low-Energy Ion Technique for Semiconductor Surface Preparation

2018 ◽  
Vol 284 ◽  
pp. 198-203
Author(s):  
S.N. Chebotarev ◽  
V.A. Irkha ◽  
Adnan A.A. Mohamed
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Surface Preparation ◽  
Target Surface ◽  
Low Energy ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Two Component ◽  
Argon Ions ◽  
Sputtering Yields

We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

Acute Electrophysiological Effect of Pulsed Gallium–Arsenide Low-Energy Laser Irradiation on Isolated Frog Sciatic Nerve

2002 ◽  
Vol 17 (1) ◽  
pp. 62-67 ◽  
Author(s):  
Ü Çömelekoğlu ◽  
S. Bağiş ◽  
B. Büyükakilli ◽  
G. Şahin ◽  
C. Erdoğan ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Sciatic Nerve ◽  
Laser Irradiation ◽  
Low Energy ◽  
Electrophysiological Effect ◽  
Energy Laser ◽  
Frog Sciatic Nerve ◽  
Low Energy Laser

High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

2010 ◽  
Vol 27 (2) ◽  
pp. 024212 ◽  
Author(s):  
Xu Ming ◽  
Shi Wei ◽  
Hou Lei ◽  
Xue Hong ◽  
Wu Shen-Jiang ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Spark Gap ◽  
Semiconductor Switch ◽  
Current Operation
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