Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching

2018 ◽  
Vol 65 (4) ◽  
pp. 1308-1313 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Ruicheng Qiu ◽  
Xu Fang
Keyword(s):  
Gallium Arsenide ◽  
Low Energy ◽  
Ultra Wideband ◽  
Microwave Generation ◽  
Semiconductor Switch ◽  
Ultrafast Switching

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

2014 ◽  
Vol 115 (9) ◽  
pp. 094503 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao ◽  
Xuelin Yuan
Keyword(s):  
Gallium Arsenide ◽  
Semiconductor Switch ◽  
Ultrafast Switching

A Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Delayed Breakdown

2015 ◽  
Vol 36 (11) ◽  
pp. 1176-1179 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao
Keyword(s):  
Gallium Arsenide ◽  
Low Energy ◽  
Semiconductor Switch

scholarly journals Performance Improvement of Ultra Wideband Multiple Access Modulation System using a new Optimal Pulse Shape

2017 ◽  
Vol 6 (1) ◽  
pp. 20
Author(s):  
V. Goyal ◽  
B. S. Dhaliwal
Keyword(s):  
Performance Improvement ◽  
Pulse Shape ◽  
Multiple Access ◽  
Energy Levels ◽  
Rake Receiver ◽  
Correct Choice ◽  
Low Energy ◽  
Ultra Wideband ◽  
High Data ◽  
Very High

Ultra-wideband (UWB) uses very low energy levels to transfer data at very high data rate and bandwidth. An optimal and correct choice of transmission pulse shape is an important criterion in this technology. In this paper, we will present an approach for the generation of an optimal pulse shape with the optimal generation of pulse shape values that can provide effective results when transmitted using multiple access modulation technique over a multipath channel and received by a RAKE type receiver. The bit error analysis of constructed model is also given using Ideal Rake, selective RAKE, and partial RAKE receiver configurations.

Low-Energy Ion Technique for Semiconductor Surface Preparation

2018 ◽  
Vol 284 ◽  
pp. 198-203
Author(s):  
S.N. Chebotarev ◽  
V.A. Irkha ◽  
Adnan A.A. Mohamed
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Surface Preparation ◽  
Target Surface ◽  
Low Energy ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Two Component ◽  
Argon Ions ◽  
Sputtering Yields

We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

Sign in / Sign up

Export Citation Format

Share Document