IDENTIFY OF THE MICRO-DEFECTS IN SEMI-INSULATING GaAs

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4484-4486
Author(s):  
YUESHENG XU ◽  
CHUNLING ZHANG ◽  
LEI TANG ◽  
CAICHI LIU ◽  
JINGCHEN HAO
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Arsenide ◽  
Strong Interaction ◽  
Chemical Etching ◽  
Experimental Results ◽  
Transmission Electron ◽  
Koh Etching ◽  
Scanning Electron

The micro-defects in semi-insulating gallium arsenide (SI-GaAs) were investigated by means of chemical etching (ultrasonic aided Abtahams-Buiocchi etching, melting KOH etching), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The experimental results showed that the micro-defects in SI-GaAs are micro-precipitates of As with the size of microns. Micro-defects and dislocations have strong interaction, dislocations absorb the micro-defects and micro-defects decorate on the dislocations.

Lattice Relaxation Effects in Si and GaAs Nanocrystals

1994 ◽  
Vol 358 ◽  
Author(s):  
X. S. Zhao ◽  
Y. R. Ge ◽  
J. Schroeder ◽  
P. D. Persans
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
Porous Silicon ◽  
Raman Scattering ◽  
Lattice Relaxation ◽  
Experimental Results ◽  
Vibrational Modes ◽  
Strain Effects ◽  
Relaxation Effects ◽  
Almost All

ABSTRACTRaman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.

Photoconductivity of semi-insulating gallium arsenide in the presence of a magnetic field

1969 ◽  
Vol 47 (24) ◽  
pp. 2789-2796 ◽  
Author(s):  
H. Milner-Brown ◽  
E. Fortin
Keyword(s):  
Magnetic Field ◽  
Gallium Arsenide ◽  
Simple Model ◽  
Surface Treatment ◽  
Sample Surface ◽  
Sample Thickness ◽  
Experimental Results ◽  
Theoretical Predictions ◽  
Temperature Surface

The effect of a magnetic field on the photoconductivity of GaAs has been investigated at 300 °K and 90 °K. The field deflects the photocarriers towards the surface or the volume of the sample, resulting in a decrease or an increase of the photocurrent. The effect is attributed to lifetime inhomogeneities across the sample thickness and has been studied as a function of temperature, surface treatment of the sample, and wavelength of excitation. The results can be expressed as the ratio R = ip+/ip−, where ip+ and ip− are the photocurrents when the carriers are deflected away or towards the sample surface respectively. For a sample mechanically polished, R = 10 at 300 °K and R = 40 at 90 °K while for a chemically polished sample R = 3.5 at 300 °K and R = 10 at 90 °K for B = 2.2 Wb/m2, V = 400 V, and λ excitation = 7500 Å. Independent measurements of the carrier mobilities and of their surface and bulk lifetimes have been performed to allow a direct comparison between experimental results and theoretical predictions based on a simple model.

Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

1993 ◽  
Vol 302 ◽  
Author(s):  
W. Bencivelli ◽  
E. Bertolucci ◽  
U. Bottigli ◽  
A. Cavallini ◽  
S. D'Auria ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Room Temperature ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Experimental Results ◽  
Simulation Program ◽  
Charge Collection ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Digital Radiology

ABSTRACTGallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

Flatband Electroreflectance of Gallium Arsenide. I. Experimental Results

1972 ◽  
Vol 6 (6) ◽  
pp. 2248-2257 ◽  
Author(s):  
Stephen F. Pond ◽  
Paul Handler
Keyword(s):  
Gallium Arsenide ◽  
Experimental Results

ЦИФРОВЫЕ ДРАЙВЕРЫ УПРАВЛЕНИЯ НА ОСНОВЕ GAAS

2020 ◽  
Vol 96 (3s) ◽  
pp. 356-358
Author(s):  
В.В. Курикалов ◽  
Е.В. Сапожников ◽  
Д.С. Хохол
Keyword(s):  
Gallium Arsenide ◽  
Digital Control ◽  
Experimental Results

Представлены расчетные и экспериментальные результаты разработки драйверов цифрового управления (параллельных и последовательно-параллельных) для интеграции в арсенид-галлиевые (GaAs) микросхемы с коммутационными элементами цифрового интерфейса. The paper presents simulation and experimental results of designed digital control drivers (parallel and serial to parallel) for integration inside gallium arsenide (GaAs) MMIC with switch elements and digital control.

Deep photoluminescence band related to oxygen in gallium arsenide

1982 ◽  
Vol 41 (9) ◽  
pp. 863-865 ◽  
Author(s):  
Phil Won Yu ◽  
D. C. Walters
Keyword(s):  
Gallium Arsenide ◽  
Photoluminescence Band

Lumped-element components for GaAs monolithic microwave integrated circuits

1985 ◽  
Vol 63 (6) ◽  
pp. 736-739
Author(s):  
M. Gaudreault ◽  
M. G. Stubbs
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Computer Modelling ◽  
Experimental Results ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Lumped Element ◽  
Aspect Ratios ◽  
Circuit Designer ◽  
Matching Techniques

Gallium-arsenide monolithic microwave integrated circuits (GaAs MMIC's) promise the microwave circuit designer significant size, weight, and reliability advantages. Distributed and lumped matching techniques have been utilized previously in MMIC design with the latter offering greater bandwidth and smaller size. In this paper, experimental results for lumped interdigitated capacitors on a gallium-arsenide substrate are presented. Computer modelling in the frequency range 2–18 GHz was used to derive a set of design curves for these capacitors. These curves cover aspect ratios of w/s = 1 and w/s = 2.5. Experimental results obtained by using these curves to design lumped-element monolithic filters show excellent agreement with theory.

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