scholarly journals Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

2018 ◽  
Vol 65 (7) ◽  
pp. 2765-2770 ◽  
Author(s):  
Matteo Borga ◽  
Matteo Meneghini ◽  
Steve Stoffels ◽  
Xiangdong Li ◽  
Niels Posthuma ◽  
...  
Keyword(s):  
Vertical Leakage ◽  
Gan On Si

Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers

2019 ◽  
Vol 128 ◽  
pp. 199-203 ◽  
Author(s):  
Chunyan Song ◽  
Xuelin Yang ◽  
Panfeng Ji ◽  
Jun Tang ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Electron Injection ◽  
Epitaxial Layers ◽  
Vertical Leakage ◽  
Gan On Si

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

2012 ◽  
Vol 33 (8) ◽  
pp. 1132-1134 ◽  
Author(s):  
Chunhua Zhou ◽  
Qimeng Jiang ◽  
Sen Huang ◽  
Kevin J. Chen
Keyword(s):  
Vertical Leakage ◽  
Gan On Si

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

2011 ◽  
Vol 32 (11) ◽  
pp. 1534-1536 ◽  
Author(s):  
Iruthayaraj Beaula Rowena ◽  
Susai Lawrence Selvaraj ◽  
Takashi Egawa
Keyword(s):  
Leakage Current ◽  
Breakdown Field ◽  
Vertical Leakage ◽  
Gan On Si

scholarly journals Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

2018 ◽  
Vol 124 (5) ◽  
pp. 055702 ◽  
Author(s):  
F. S. Choi ◽  
J. T. Griffiths ◽  
Chris Ren ◽  
K. B. Lee ◽  
Z. H. Zaidi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Leakage Mechanism ◽  
Vertical Leakage ◽  
Gan On Si

scholarly journals Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 101
Author(s):  
Alaleh Tajalli ◽  
Matteo Borga ◽  
Matteo Meneghini ◽  
Carlo De Santi ◽  
Davide Benazzi ◽  
...  
Keyword(s):  
Positive Charge ◽  
Defect Density ◽  
Charge Trapping ◽  
Breakdown Field ◽  
Silicon Substrates ◽  
Nucleation Layer ◽  
Uniform Sample ◽  
The Difference ◽  
Vertical Leakage ◽  
Gan On Si

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon substrates: AlN/Si, AlGaN/AlN/Si, C:GaN/AlGaN/AlN/Si. The results demonstrate that: (i) the AlN layer grown on silicon has a breakdown field of 3.25 MV/cm, which further decreases with temperature. This value is much lower than that of highly-crystalline AlN, and the difference can be ascribed to the high density of vertical leakage paths like V-pits or threading dislocations. (ii) the AlN/Si structures show negative charge trapping, due to the injection of electrons from silicon to deep traps in AlN. (iii) adding AlGaN on top of AlN significantly reduces the defect density, thus resulting in a more uniform sample-to-sample leakage. (iv) a substantial increase in breakdown voltage is obtained only in the C:GaN/AlGaN/AlN/Si structure, that allows it to reach VBD > 800 V. (v) remarkably, during a vertical I–V sweep, the C:GaN/AlGaN/AlN/Si stack shows evidence for positive charge trapping. Holes from C:GaN are trapped at the GaN/AlGaN interface, thus bringing a positive charge storage in the buffer. For the first time, the results summarized in this paper clarify the contribution of each buffer layer to vertical leakage and breakdown.

Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

2015 ◽  
Vol 242 ◽  
pp. 417-420 ◽  
Author(s):  
Michael Knetzger ◽  
Elke Meissner ◽  
Joff Derluyn ◽  
Marianne Germain ◽  
Jochen Friedrich
Keyword(s):  
Leakage Current ◽  
Electronic Devices ◽  
Carbon Doping ◽  
Structural Defects ◽  
Power Electronic ◽  
Si Substrates ◽  
Active Layers ◽  
Analytical Scanning Electron Microscopy ◽  
Vertical Leakage ◽  
Gan On Si

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements.Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.

Suppression technique of vertical leakage current in GaN-on-Si power transistors

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD12
Author(s):  
Giorgia Longobardi ◽  
Dario Pagnano ◽  
Florin Udrea ◽  
Jinming Sun ◽  
Reenu Garg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Transistors ◽  
Suppression Technique ◽  
Vertical Leakage ◽  
Gan On Si
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