Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

2011 ◽  
Vol 32 (11) ◽  
pp. 1534-1536 ◽  
Author(s):  
Iruthayaraj Beaula Rowena ◽  
Susai Lawrence Selvaraj ◽  
Takashi Egawa
Keyword(s):  
Leakage Current ◽  
Breakdown Field ◽  
Vertical Leakage ◽  
Gan On Si

scholarly journals Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 101
Author(s):  
Alaleh Tajalli ◽  
Matteo Borga ◽  
Matteo Meneghini ◽  
Carlo De Santi ◽  
Davide Benazzi ◽  
...  
Keyword(s):  
Positive Charge ◽  
Defect Density ◽  
Charge Trapping ◽  
Breakdown Field ◽  
Silicon Substrates ◽  
Nucleation Layer ◽  
Uniform Sample ◽  
The Difference ◽  
Vertical Leakage ◽  
Gan On Si

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon substrates: AlN/Si, AlGaN/AlN/Si, C:GaN/AlGaN/AlN/Si. The results demonstrate that: (i) the AlN layer grown on silicon has a breakdown field of 3.25 MV/cm, which further decreases with temperature. This value is much lower than that of highly-crystalline AlN, and the difference can be ascribed to the high density of vertical leakage paths like V-pits or threading dislocations. (ii) the AlN/Si structures show negative charge trapping, due to the injection of electrons from silicon to deep traps in AlN. (iii) adding AlGaN on top of AlN significantly reduces the defect density, thus resulting in a more uniform sample-to-sample leakage. (iv) a substantial increase in breakdown voltage is obtained only in the C:GaN/AlGaN/AlN/Si structure, that allows it to reach VBD > 800 V. (v) remarkably, during a vertical I–V sweep, the C:GaN/AlGaN/AlN/Si stack shows evidence for positive charge trapping. Holes from C:GaN are trapped at the GaN/AlGaN interface, thus bringing a positive charge storage in the buffer. For the first time, the results summarized in this paper clarify the contribution of each buffer layer to vertical leakage and breakdown.

Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

2015 ◽  
Vol 242 ◽  
pp. 417-420 ◽  
Author(s):  
Michael Knetzger ◽  
Elke Meissner ◽  
Joff Derluyn ◽  
Marianne Germain ◽  
Jochen Friedrich
Keyword(s):  
Leakage Current ◽  
Electronic Devices ◽  
Carbon Doping ◽  
Structural Defects ◽  
Power Electronic ◽  
Si Substrates ◽  
Active Layers ◽  
Analytical Scanning Electron Microscopy ◽  
Vertical Leakage ◽  
Gan On Si

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements.Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.

Suppression technique of vertical leakage current in GaN-on-Si power transistors

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD12
Author(s):  
Giorgia Longobardi ◽  
Dario Pagnano ◽  
Florin Udrea ◽  
Jinming Sun ◽  
Reenu Garg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Transistors ◽  
Suppression Technique ◽  
Vertical Leakage ◽  
Gan On Si

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

2020 ◽  
Vol 67 (2) ◽  
pp. 595-599 ◽  
Author(s):  
Matteo Borga ◽  
Carlo De Santi ◽  
S. Stoffels ◽  
Benoit Bakeroot ◽  
Xiangdong Li ◽  
...  
Keyword(s):  
Leakage Current ◽  
Vertical Leakage

Electrical Properties of a TiO2-SrO Varistor System

2014 ◽  
Vol 975 ◽  
pp. 168-172
Author(s):  
Tiago Delbrücke ◽  
Igor Schmidt ◽  
Sergio Cava ◽  
Vânia Caldas Sousa
Keyword(s):  
Titanium Dioxide ◽  
Electrical Properties ◽  
Field Strength ◽  
Leakage Current ◽  
Low Voltage ◽  
Nonlinear Coefficient ◽  
Breakdown Field ◽  
Strontium Oxide ◽  
Breakdown Field Strength

The addition of different dopants affects the densification and electrical properties of TiO2 based varistor ceramics. The nonlinear current (I) and voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.5-2 at.%) of strontium oxide. This paper discusses the electrical properties of such an SrO doped TiO2 system, and demonstrates that some combinations produce electrical properties suitable for use as low voltage varistors. The high value of the nonlinear coefficient (α) (6.6), the breakdown field strength (Eb) (328 V/cm) and the leakage current (Ir) (0.22 mA/cm2) obtained in a system newly doped with SrO, are all adequate properties for application in low voltage varistors.

scholarly journals Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 842 ◽  
Author(s):  
Myoung-Jin Kang ◽  
Hyun-Seop Kim ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Chemical Vapor ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Breakdown Field ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Passivation Process ◽  
Gan On Si ◽  
Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers

2019 ◽  
Vol 128 ◽  
pp. 199-203 ◽  
Author(s):  
Chunyan Song ◽  
Xuelin Yang ◽  
Panfeng Ji ◽  
Jun Tang ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Electron Injection ◽  
Epitaxial Layers ◽  
Vertical Leakage ◽  
Gan On Si

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

2012 ◽  
Vol 33 (8) ◽  
pp. 1132-1134 ◽  
Author(s):  
Chunhua Zhou ◽  
Qimeng Jiang ◽  
Sen Huang ◽  
Kevin J. Chen
Keyword(s):  
Vertical Leakage ◽  
Gan On Si

Preparation and Characterization Of SrTio3 Thin Films Using ECR Plasma Assisted MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Joon Sung Lee ◽  
Han Wook Song ◽  
Dae Sung Yoon ◽  
Byung Hyuk Jun ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Oxygen Plasma ◽  
Grain Structure ◽  
Breakdown Field ◽  
Ecr Plasma ◽  
Step Coverage

ABSTRACTSrTiO3 thin films were prepared on Si(p-type 100) and Pt/SiO2/Si substrates using ECR plasma (or without ECR plasma) assisted MOCVD. Sr(TMI-D)2 and Ti-isopropoxide were used as Sr and Ti metal organic sources, respectively. Perovskite SrTiO3 films were obtained at relatively low temperature of 500°C (using ECR oxygen plasma. Experimental results indicated that higher deposition temperature and ECR oxygen plasma increase the crystallinity, the dielectric constant and the leakage current density. The dielectric constant and the dielectric loss were 222 and 0.04, respectively, for 1234 Å thin SrTiO3 film (Sr/(Sr+Ti)=0.5). The leakage current density was 3.78 × 10−7 A/cm2 at 1.0V, and the dielectric breakdown field was 0.57MV/cm. SEM analyses showed that SrTiO3 films have a uniform and fine grain structure. In terms of step coverage, a lateral step coverage of 50% at 0.8 μm step (the aspect ratio was 1) was obtained with the thickness uniformity of ± 0.5% and the composition uniformity of ±1.2% at 4′′ wafer.

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