Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

2017 ◽  
Vol 64 (11) ◽  
pp. 4393-4399 ◽  
Author(s):  
Jun-Young Park ◽  
Byung-Hyun Lee ◽  
Ki Soo Chang ◽  
Dong Uk Kim ◽  
Chanbae Jeong ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Self Heating ◽  
Heating Effects

scholarly journals Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
P. Anandan ◽  
N. Malathi ◽  
N. Mohankumar
Keyword(s):  
Thermal Resistance ◽  
Silicon Nanowires ◽  
Thermal Noise ◽  
Silicon Nanowire ◽  
Channel Length ◽  
Temperature Dependent ◽  
Short Channel ◽  
Self Heating ◽  
Heating Effects ◽  
Temperature Dependent Model

Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-dependent model for silicon nanowires including the self-heating effects has been derived and its effects on device parameters have been observed. The power spectral density as a function of thermal resistance shows significant improvement as the channel length decreases. The effects of thermal noise including self-heating of the device are explored. Moreover, significant reduction in noise with respect to channel thermal resistance, gate length, and biasing is analyzed.

Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

2012 ◽  
Vol 11 (1) ◽  
pp. 106-117 ◽  
Author(s):  
K. Raleva ◽  
D. Vasileska ◽  
A. Hossain ◽  
S.-K. Yoo ◽  
S. M. Goodnick
Keyword(s):  
Self Heating ◽  
Heating Effects

Detection and evaluation of self-heating effects in n+nn+AlxGa1-xAs devices by noise temperature measurements

1995 ◽  
Vol 10 (4) ◽  
pp. 515-522 ◽  
Author(s):  
M De Murcia ◽  
E Richard ◽  
J M Perraudin ◽  
A Boyer ◽  
A Benvenuti ◽  
...  
Keyword(s):  
Noise Temperature ◽  
Temperature Measurements ◽  
Self Heating ◽  
Heating Effects

Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation

2017 ◽  
Vol 137 ◽  
pp. 123-127
Author(s):  
Ilho Myeong ◽  
Dokyun Son ◽  
Hyunsuk Kim ◽  
Myounggon Kang ◽  
Hyungcheol Shin
Keyword(s):  
Shallow Trench Isolation ◽  
Self Heating ◽  
Heating Effects ◽  
Trench Isolation

scholarly journals Self-Heating Effects In Polysilicon Source Gated Transistors

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
R. A. Sporea ◽  
T. Burridge ◽  
S. R. P. Silva
Keyword(s):  
Self Heating ◽  
Heating Effects

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

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