Investigation of Self-Heating Effects in Vacuum Gate Dielectric Gate-all-Around Vertically Stacked Silicon Nanowire Field Effect Transistors

2020 ◽  
Vol 67 (10) ◽  
pp. 4085-4091
Author(s):  
Yali Su ◽  
Junhua Lai ◽  
Li Sun
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Self Heating ◽  
Heating Effects

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CC03 ◽  
Author(s):  
Tsunaki Takahashi ◽  
Nobuyasu Beppu ◽  
Kunro Chen ◽  
Shunri Oda ◽  
Ken Uchida
Keyword(s):  
Performance Optimization ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Heating ◽  
Heating Effects ◽  
Analog Performance

Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy

2021 ◽  
Vol 21 (11) ◽  
pp. 5736-5741
Author(s):  
Jengsu Yoo ◽  
Soo-Kyung Chang ◽  
Gunwoo Jung ◽  
Kyuheon Kim ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Thermal Characteristics ◽  
Electrode Structure ◽  
Self Heating ◽  
Gate Structure ◽  
Heating Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

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