scholarly journals Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
P. Anandan ◽  
N. Malathi ◽  
N. Mohankumar
Keyword(s):  
Thermal Resistance ◽  
Silicon Nanowires ◽  
Thermal Noise ◽  
Silicon Nanowire ◽  
Channel Length ◽  
Temperature Dependent ◽  
Short Channel ◽  
Self Heating ◽  
Heating Effects ◽  
Temperature Dependent Model

Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-dependent model for silicon nanowires including the self-heating effects has been derived and its effects on device parameters have been observed. The power spectral density as a function of thermal resistance shows significant improvement as the channel length decreases. The effects of thermal noise including self-heating of the device are explored. Moreover, significant reduction in noise with respect to channel thermal resistance, gate length, and biasing is analyzed.

Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

2017 ◽  
Vol 64 (11) ◽  
pp. 4393-4399 ◽  
Author(s):  
Jun-Young Park ◽  
Byung-Hyun Lee ◽  
Ki Soo Chang ◽  
Dong Uk Kim ◽  
Chanbae Jeong ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Self Heating ◽  
Heating Effects

scholarly journals A Rigorous Analysis of Self-Heating Effects in Nanoscale Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs

2021 ◽  
Author(s):  
Vaibhav Purwar ◽  
Rajeev Gupta ◽  
Pramod Kumar Tiwari ◽  
Sarvesh Dubey
Keyword(s):  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Double Gate ◽  
Short Channel ◽  
Transport Models ◽  
Spacer Length ◽  
Self Heating ◽  
Heating Effects ◽  
The Impact

Abstract Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs are one of the preferred choices for ULSI applications because of significantly low off-current, reduced power dissipation, and high immunity to short channel effect. However, DP-DGAA MOSFETs suffer from self-heating owing to the unavailability of proper heat take-out paths. In this paper, the electrothermal (ET) simulations have been performed with hydrodynamic and thermodynamic transport models to analyze the self-heating effects (SHEs) in DP-DGAA MOSFETs. The electrothermal characteristics against various device parameters such as spacer length, device thickness, thermal contact resistance, and drain voltage have been investigated. The effect of SHE on the drive current has also been evaluated. Further, the impact of thermal contact resistance and ambient temperature variations of the device on SHE and thermal noise have been analyzed using Sentaurus TCAD simulator.

Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

2002 ◽  
Vol 743 ◽  
Author(s):  
M. Kuball ◽  
S. Rajasingam ◽  
A. Sarua ◽  
M. J. Uren ◽  
T. Martin ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Spatial Resolution ◽  
Cross Talk ◽  
Temperature Rise ◽  
Device Performance ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Finger Width

ABSTRACTWe report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1m spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

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