Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

2017 ◽  
Vol 64 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Hao-Tsung Chen ◽  
Chia-Ying Su ◽  
Charng-Gan Tu ◽  
Yu-Feng Yao ◽  
Chun-Han Lin ◽  
...  
Keyword(s):  
Hole Concentration ◽  
High Mobility ◽  
Type Conductivity ◽  
High Hole Concentration ◽  
P Type

High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

2006 ◽  
Vol 498 (1-2) ◽  
pp. 113-117 ◽  
Author(s):  
Po-Chang Chen ◽  
Chin-Hsiang Chen ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Ping-Chuan Chang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Epitaxial Layers ◽  
High Hole Concentration ◽  
P Type

Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang
Keyword(s):  
Spray Pyrolysis ◽  
Deep Level ◽  
Hole Concentration ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Near Band Edge ◽  
Dense Microstructure ◽  
Ultrasonic Spray ◽  
High Hole Concentration ◽  
P Type

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

MOCVD Growth of High Hole Concentration (〉2x1019 cm-3) P-Type InGaN for Solar Cell Application

2008 ◽  
Author(s):  
Andrew Melton ◽  
Hongbo Yu ◽  
Omkar Jani ◽  
Balakrishnam R. Jampana ◽  
Shen-Jie Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Hole Concentration ◽  
Solar Cell Application ◽  
Mocvd Growth ◽  
High Hole Concentration ◽  
P Type

p-type in ZnO:N by codoping with Cr

2003 ◽  
Vol 786 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Kossut ◽  
R. Butkute ◽  
W. Dobrowolski ◽  
...  
Keyword(s):  
Time Scale ◽  
Room Temperature ◽  
Surface Passivation ◽  
Hole Concentration ◽  
Rf Sputtering ◽  
Zno Films ◽  
Type Conductivity ◽  
Chromium Doping ◽  
P Type ◽  
Over Time

ABSTRACTWe report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

scholarly journals Электрофизические и фотолюминесцентные исследования сверхрешeток \LT-GaAs/GaAs : Si\, выращенных методом молекулярно-лучевой эпитаксии на подложках GaAs с ориентацией (100) и (111)А

2019 ◽  
Vol 53 (2) ◽  
pp. 258
Author(s):  
Г.Б. Галиев ◽  
Е.А. Климов ◽  
А.Н. Клочков ◽  
В.Б. Копылов ◽  
C.C. Пушкарев
Keyword(s):  
Growth Temperature ◽  
Hole Concentration ◽  
Charge Carriers ◽  
Photoluminescence Spectra ◽  
Type Conductivity ◽  
Semiconductor Structures ◽  
Higher Temperature ◽  
P Type ◽  
First Time ◽  
Lt Gaas

AbstractThe results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p -type conductivity upon doping with Si, are presented. The structures are {LT-GaAs/GaAs:Si} superlattices, in which the LT-GaAs layers are grown at a low temperature (in the range 280–350°C) and the GaAs:Si layers at a higher temperature (470°C). The p -type conductivity upon doping with Si is provided by the use of GaAs(111)A substrates and the choice of the growth temperature and the ratio between As_4 and Ga fluxes. The hole concentration steadily decreases, as the growth temperature of LT-GaAs layers is lowered from 350 to 280°C, which is attributed to an increase in the roughness of interfaces between layers and to the formation of regions depleted of charge carriers at the interfaces between the GaAs:Si and LT-GaAS layers. The evolution of the photoluminescence spectra at 77 K under variations in the growth temperature of LT-GaAs is interpreted as a result of changes in the concentration of Ga_As and V _Ga point defects and Si_Ga– V _Ga, V _As–Si_As, and Si_As–Si_Ga complexes.

AlN and AlGaN by MOVPE for UV Light Emitting Devices

2008 ◽  
Vol 590 ◽  
pp. 175-210 ◽  
Author(s):  
Hiroshi Amano ◽  
Masataka Imura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
High Efficiency ◽  
Uv Light ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High Hole Concentration ◽  
P Type

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

MOCVD Growth of High-Hole Concentration (>2×1019 cm−3) P-Type InGaN for Solar Cell Application

2008 ◽  
Vol 1123 ◽  
Author(s):  
Hongbo Yu ◽  
Andrew Melton ◽  
Omkar Jani ◽  
Balakrishnam Jampana ◽  
Shenjie Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Hole Concentration ◽  
Molar Ratio ◽  
Activation Temperature ◽  
Solar Cell Application ◽  
Mocvd Growth ◽  
High Hole Concentration ◽  
P Type ◽  
Photovoltaic Material ◽  
Mg Doped

AbstractInGaN alloys are widely researched in diverse optoelectronic applications. This material has also been demonstrated as a photovoltaic material. This paper presents the study to achieve optimum electrically active p-type InGaN epi-layers. Mg doped InGaN films with 20% In composition are grown on GaN templates/sapphire substrates by MOCVD. It is found that the hole concentration of p-type InGaN depends strongly on the Mg flow rate and V/III molar ratio and hole concentration greater than 2×1019 cm−3 has been achieved at room temperature. The optimum activation temperature of Mg-doped InGaN layer has been found to be 550-600°C, which is lower than that of Mg-doped GaN. A solar cell was realized successfully using the InGaN epi-layers presented here.

Realizing n-type gete through suppressing the formation of cation vacancies and bi-doping*

2021 ◽  
Vol 38 (12) ◽  
pp. 127201
Author(s):  
Min Zhang ◽  
Chaoliang Hu ◽  
Qi Zhang ◽  
Feng Liu ◽  
Shen Han ◽  
...  
Keyword(s):  
Band Structure ◽  
Formation Energy ◽  
Electronic Band Structure ◽  
Hole Concentration ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
Cation Vacancies ◽  
Bi Doping ◽  
High Hole Concentration ◽  
P Type

It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about 1021 cm−3. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak zT of 0.34 at 525 K is obtained for (Ge0.6Pb0.4)0.88Bi0.12Te0.6Se0.4. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

2015 ◽  
Vol 106 (16) ◽  
pp. 162102 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Enze Han ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
High Hole Concentration ◽  
P Type ◽  
Surfactant Assisted

scholarly journals P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 819 ◽  
Author(s):  
Wencan Li ◽  
Jiao Cui ◽  
Weiwei Wang ◽  
Dahuai Zheng ◽  
Longfei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
Nitrogen Plasma ◽  
Si Substrate ◽  
Surface Appearance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

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