High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

2015 ◽  
Vol 106 (16) ◽  
pp. 162102 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Enze Han ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
High Hole Concentration ◽  
P Type ◽  
Surfactant Assisted

Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

2014 ◽  
Vol 252 (5) ◽  
pp. 1109-1115 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted

High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

2006 ◽  
Vol 498 (1-2) ◽  
pp. 113-117 ◽  
Author(s):  
Po-Chang Chen ◽  
Chin-Hsiang Chen ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Ping-Chuan Chang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Epitaxial Layers ◽  
High Hole Concentration ◽  
P Type

Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang
Keyword(s):  
Spray Pyrolysis ◽  
Deep Level ◽  
Hole Concentration ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Near Band Edge ◽  
Dense Microstructure ◽  
Ultrasonic Spray ◽  
High Hole Concentration ◽  
P Type

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.

MOCVD Growth of High Hole Concentration (〉2x1019 cm-3) P-Type InGaN for Solar Cell Application

2008 ◽  
Author(s):  
Andrew Melton ◽  
Hongbo Yu ◽  
Omkar Jani ◽  
Balakrishnam R. Jampana ◽  
Shen-Jie Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Hole Concentration ◽  
Solar Cell Application ◽  
Mocvd Growth ◽  
High Hole Concentration ◽  
P Type

Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method

2013 ◽  
Vol 6 (4) ◽  
pp. 041001 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Mg Doping ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted

scholarly journals Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 144
Author(s):  
Ying Zhao ◽  
Shengrui Xu ◽  
Hongchang Tao ◽  
Yachao Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Hole Concentration ◽  
Light Output ◽  
Hall Effect Measurement ◽  
High Conductivity ◽  
Light Emitting ◽  
Superlattice Structure ◽  
Delta Doping ◽  
Doping Technique ◽  
P Type

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

AlN and AlGaN by MOVPE for UV Light Emitting Devices

2008 ◽  
Vol 590 ◽  
pp. 175-210 ◽  
Author(s):  
Hiroshi Amano ◽  
Masataka Imura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
High Efficiency ◽  
Uv Light ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High Hole Concentration ◽  
P Type

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

2017 ◽  
Vol 64 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Hao-Tsung Chen ◽  
Chia-Ying Su ◽  
Charng-Gan Tu ◽  
Yu-Feng Yao ◽  
Chun-Han Lin ◽  
...  
Keyword(s):  
Hole Concentration ◽  
High Mobility ◽  
Type Conductivity ◽  
High Hole Concentration ◽  
P Type

High hole concentration in nonpolar a-plane p-AlGaN films with Mg-delta doping technique

2017 ◽  
Vol 109 ◽  
pp. 880-885 ◽  
Author(s):  
Zili Wu ◽  
Xiong Zhang ◽  
Qian Dai ◽  
Jianguo Zhao ◽  
Aijie Fan ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
High Hole Concentration ◽  
Doping Technique

MOCVD Growth of High-Hole Concentration (>2×1019 cm−3) P-Type InGaN for Solar Cell Application

2008 ◽  
Vol 1123 ◽  
Author(s):  
Hongbo Yu ◽  
Andrew Melton ◽  
Omkar Jani ◽  
Balakrishnam Jampana ◽  
Shenjie Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Hole Concentration ◽  
Molar Ratio ◽  
Activation Temperature ◽  
Solar Cell Application ◽  
Mocvd Growth ◽  
High Hole Concentration ◽  
P Type ◽  
Photovoltaic Material ◽  
Mg Doped

AbstractInGaN alloys are widely researched in diverse optoelectronic applications. This material has also been demonstrated as a photovoltaic material. This paper presents the study to achieve optimum electrically active p-type InGaN epi-layers. Mg doped InGaN films with 20% In composition are grown on GaN templates/sapphire substrates by MOCVD. It is found that the hole concentration of p-type InGaN depends strongly on the Mg flow rate and V/III molar ratio and hole concentration greater than 2×1019 cm−3 has been achieved at room temperature. The optimum activation temperature of Mg-doped InGaN layer has been found to be 550-600°C, which is lower than that of Mg-doped GaN. A solar cell was realized successfully using the InGaN epi-layers presented here.

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