Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

2016 ◽  
Vol 63 (7) ◽  
pp. 2729-2734 ◽  
Author(s):  
Zhan Gao ◽  
Maria Fatima Romero ◽  
Maria Angela Pampillon ◽  
Enrique San Andres ◽  
Fernando Calle
Keyword(s):  
Gate Dielectric ◽  
Si Substrate

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

2018 ◽  
Vol 65 (5) ◽  
pp. 1759-1764 ◽  
Author(s):  
Yongle Qi ◽  
Yumeng Zhu ◽  
Jiang Zhang ◽  
Xinpeng Lin ◽  
Kai Cheng ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Si Substrate

High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate

2008 ◽  
Vol 44 (3) ◽  
pp. 240 ◽  
Author(s):  
J.P. Donnelly ◽  
D.Q. Kelly ◽  
D.I. Garcia-Gutierrez ◽  
M. José-Yacamán ◽  
S.K. Banerjee
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
Si Substrate ◽  
Metal Gate

Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric

2014 ◽  
Author(s):  
S.K. Wang ◽  
X. Yang ◽  
Z. Gong ◽  
R. Liang ◽  
B. Sun ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
Si Substrate

Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric

2010 ◽  
Vol 87 (11) ◽  
pp. 2423-2428 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Min-Lin Wu ◽  
Jia-Rong Wu ◽  
Yuan-Sheng Lin
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Si Substrate ◽  
Mos Device

Novel Dielectric Materials for Future Transistor Generations

2006 ◽  
Vol 16 (01) ◽  
pp. 221-239 ◽  
Author(s):  
GENNADI BERSUKER ◽  
BYOUNG HUN LEE ◽  
HOWARD R. HUFF
Keyword(s):  
Gate Dielectric ◽  
Dielectric Materials ◽  
Structural Defects ◽  
Electrical Characteristics ◽  
Si Substrate ◽  
Voltage Instability ◽  
Fixed Charges ◽  
High K ◽  
High K Materials

Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.

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