Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50MeV Li3+ ions irradiation

2011 ◽  
Vol 269 (23) ◽  
pp. 2765-2770 ◽  
Author(s):  
Vikram Singh ◽  
N. Shashank ◽  
Satinder K. Sharma ◽  
R.S. Shekhawat ◽  
Dinesh Kumar ◽  
...  
Keyword(s):  
Frequency Dependence ◽  
Gate Dielectric ◽  
Series Resistance ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Before And After

Effects of Post-Deposition Annealing Time on Metal-Organic Decomposed Lanthanum Cerium Oxide Film Spin-Coated on Si Substrate

2014 ◽  
Vol 1024 ◽  
pp. 364-367 ◽  
Author(s):  
Way Foong Lim ◽  
Zainovia Lockman ◽  
Kuan Yew Cheong
Keyword(s):  
Cerium Oxide ◽  
Dwell Time ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Post Deposition Annealing ◽  
Fixed Temperature ◽  
Post Deposition

Metal-oxide-semiconductor characteristics of MOD-derived lanthanum cerium oxide (LaxCeyOz) film deposited on n-type Si substrate have been studied. Post-deposition annealing of the oxide was performed in argon atmosphere for a dwell time, ranging from 15 to 120 min at a fixed temperature of 400°C. Results demonstrated presence of positively charged oxygen vacancies in all of the oxides post-deposition annealed for different dwell time. Acquisition of the lowest effective oxide charge as well as the lowest interface trap density and total interface trap density in oxide annealed for 120 min has led to the attainment of the highest breakdown voltage, surpassing other oxides.

scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

2014 ◽  
Vol 7 (4) ◽  
pp. 041202 ◽  
Author(s):  
Yueh-Chin Lin ◽  
Mao-Lin Huang ◽  
Chen-Yu Chen ◽  
Meng-Ku Chen ◽  
Hung-Ta Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Mos Capacitor

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

2012 ◽  
Vol 717-720 ◽  
pp. 457-460 ◽  
Author(s):  
Shahrzad Salemi ◽  
Akin Akturk ◽  
Siddharth Potbhare ◽  
Aivars J. Lelis ◽  
Neil Goldsman
Keyword(s):  
Density Functional Theory ◽  
Density Of States ◽  
Density Functional ◽  
Energy Levels ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Functional Theory ◽  
Before And After

We compare the effect of hydrogen, nitrogen, and phosphorous passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO2 structure. The results show that nitrogen and phosphorous passivation decrease total near interface trap density by pushing the energy levels of interface traps away from the conduction band. The density of states (DOS), including interface states (Dit), are calculated for several 4H(0001)-SiC/SiO2 structures using density functional theory (DFT).

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 502-505 ◽  
Author(s):  
Yong Ju Zheng ◽  
Tamara Isaacs-Smith ◽  
Ayayi Claude Ahyi ◽  
S. Dhar
Keyword(s):  
Borosilicate Glass ◽  
Field Effect ◽  
Gate Dielectric ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Field Effect Mobility ◽  
Channel Mobility

In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as significant improvement of channel field-effect mobility on devices with BSG than that on devices with standard NO anneal. In addition, the results indicate interface trap density decreases with increasing B concentration at the interface of BSG/4H-SiC, which in turn, results in higher channel mobility.

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