Two-Stage Degradation of p-Type Polycrystalline Silicon Thin-Film Transistors Under Dynamic Positive Bias Temperature Stress

2014 ◽  
Vol 61 (11) ◽  
pp. 3751-3756 ◽  
Author(s):  
Dongli Zhang ◽  
Mingxiang Wang ◽  
Xiaowei Lu
Keyword(s):  
Thin Film ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Positive Bias ◽  
Silicon Thin Film ◽  
Two Stage ◽  
Bias Temperature Stress ◽  
P Type

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

Hydrogen as a Cause of Abnormal Subchannel Formation Under Positive Bias Temperature Stress in a-InGaZnO Thin-Film Transistors

2019 ◽  
Vol 66 (7) ◽  
pp. 2954-2959
Author(s):  
Yu-Chieh Chien ◽  
Yi-Chieh Yang ◽  
Yu-Ching Tsao ◽  
Hsiao-Cheng Chiang ◽  
Mao-Chou Tai ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Temperature Stress

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740007
Author(s):  
Kai Liu ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Yun-Fei En ◽  
Bin Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Localized States ◽  
Silicon Thin Film ◽  
Linear Region ◽  
Channel Mobility ◽  
Source Voltage ◽  
P Type ◽  
Voltage Region

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Investigation of the instability of low-temperature poly-silicon thin film transistors under a negative bias temperature stress

2013 ◽  
Vol 9 (S1) ◽  
pp. 13-16 ◽  
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Bias Temperature Stress
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