scholarly journals Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

2013 ◽  
Vol 60 (3) ◽  
pp. 965-971 ◽  
Author(s):  
Vihar P. Georgiev ◽  
Ewan A. Towie ◽  
Asen Asenov
Keyword(s):  
Simulation Study ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Nanowire Transistor

scholarly journals Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

2016 ◽  
Author(s):  
Vihar P. Georgiev ◽  
Muhammad M. Mirza ◽  
Alexandru-Iustin Dochioiu ◽  
Fikru-Adamu Lema ◽  
Slavatore M. Amoroso ◽  
...  
Keyword(s):  
Simulation Study ◽  
Silicon Nanowire ◽  
High Current ◽  
Nanowire Transistor ◽  
Heavily Doped

Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors

2008 ◽  
Vol 53 (3) ◽  
pp. 1680-1684
Author(s):  
Chang-Yong Choi ◽  
Won-Ju Cho ◽  
Sang-Mo Koo ◽  
Sangsig Kim ◽  
Qiliang Li ◽  
...  
Keyword(s):  
Simulation Study ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Current Ratio ◽  
Dimensional Simulation
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