Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent With Pao–Sah Model

2012 ◽  
Vol 59 (11) ◽  
pp. 3130-3132 ◽  
Author(s):  
Hongyu He ◽  
Xueren Zheng ◽  
Jin He ◽  
Mansun Chan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Threshold Current ◽  
Silicon Thin Film ◽  
Channel Mobility ◽  
Effective Channel

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740007
Author(s):  
Kai Liu ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Yun-Fei En ◽  
Bin Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Localized States ◽  
Silicon Thin Film ◽  
Linear Region ◽  
Channel Mobility ◽  
Source Voltage ◽  
P Type ◽  
Voltage Region

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film

Analytical on-state current model of polycrystalline silicon thin-film transistors including the kink effect

2005 ◽  
Vol 87 (6) ◽  
pp. 063501 ◽  
Author(s):  
A. T. Hatzopoulos ◽  
D. H. Tassis ◽  
C. A. Dimitriadis ◽  
G. Kamarinos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Silicon Thin Film ◽  
Kink Effect
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