Effective Channel Mobility of Poly-Silicon Thin Film Transistors

Author(s):  
Mingxiang Wang ◽  
Man Wong ◽  
Xuejie Shi ◽  
Dongli Zhang
2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740007
Author(s):  
Kai Liu ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Yun-Fei En ◽  
Bin Li

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.


2013 ◽  
Vol 9 (S1) ◽  
pp. 13-16 ◽  
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  

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