A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film Transistors

2012 ◽  
Vol 59 (9) ◽  
pp. 2396-2402 ◽  
Author(s):  
Chih-Hsiang Ho ◽  
Georgios Panagopoulos ◽  
Kaushik Roy
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Physical Model ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Variation

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

2014 ◽  
Vol 104 (13) ◽  
pp. 133503 ◽  
Author(s):  
Kuan-Hsien Liu ◽  
Ting-Chang Chang ◽  
Ming-Siou Wu ◽  
Yi-Syuan Hung ◽  
Pei-Hua Hung ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Width ◽  
Voltage Variation

scholarly journals A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2502 ◽  
Author(s):  
Gwomei Wu ◽  
Anup Sahoo ◽  
Dave Chen ◽  
J. Chang
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Width ◽  
Capacitance Density ◽  
Voltage Variation ◽  
Igzo Tft

A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) has been carried out using SiO2, Si3N4, and Ta2O5 dielectric materials. The channel width dependent device electrical performances were investigated using three different sizes of 500 μm, 1000 μm, and 1500 μm. The reliability characteristics were revealed by the threshold voltage variation and drain current variation under positive bias stress. The e-beam deposited high-k dielectric Ta2O5 exhibited the highest stability at the stress voltage of 3 V for 1000 s due to its high capacitance density at 34.1 nF/cm2. The threshold voltage variation along the channel width decreased from SiO2, then Si3N4, to Ta2O5, because of the increased insulating property and density of capacitance. The SiO2-based a-IGZO TFT achieved a high field effect mobility of 27.9 cm2/V·s and on–off current ratio > 107 at the lower channel width of 500 μm. The gate leakage current also decreased with increasing the channel width/length ratio. In addition, the SiO2 gate dielectric-based a-IGZO TFT could be a faster device, whereas the Ta2O5 gate dielectric would be a good candidate for a higher reliability component with adequate surface treatment.

Organic Thin-Film Transistors with Low Threshold Voltage Variation on Low-Temperature Substrates

2009 ◽  
Vol 12 (3) ◽  
pp. H50 ◽  
Author(s):  
S. Gowrisanker ◽  
Y. Ai ◽  
H. Jia ◽  
M. A. Quevedo-Lopez ◽  
H. N. Alshareef ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Voltage Variation ◽  
Low Threshold

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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