scholarly journals Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport

2012 ◽  
Vol 59 (1) ◽  
pp. 206-211 ◽  
Author(s):  
Naoya Takiguchi ◽  
Shunuske Koba ◽  
Hideaki Tsuchiya ◽  
Matsuto Ogawa
Keyword(s):  
Ballistic Transport ◽  
Performance Potentials ◽  
Nanowire Mosfets

scholarly journals Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 169-173
Author(s):  
J. R. Watling ◽  
Y. P. Zhao ◽  
A. Asenov ◽  
J. R. Barker
Keyword(s):  
Ballistic Transport ◽  
Deep Submicron ◽  
Hole Transport ◽  
Recent Experimental Data ◽  
Drift Diffusion ◽  
Performance Gap ◽  
Performance Potentials ◽  
Transport Effects ◽  
And Performance ◽  
Non Equilibrium

As MOSFETs are scaled to deep submicron dimensions non-equilibrium, near ballistic, transport in p-MOSFETs becomes important. Recent experimental data indicates that as MOSFETs are scaled the performance gap between n and p-channel shrinks. Nonequilibrium transport effects and performance potentials of ‘Well Tempered’ Si p- MOSFETs with gate lengths of 50 and 25 nm are studied. Monte Carlo and calibrated Drift Diffusion simulations of these devices provide a quantitative estimate of the importance and the influence of non-equilibrium transport on submicron device performance. A possible explanation for the closing performance gap between n- and p-channel MOSFETs is offered.

Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

2006 ◽  
Author(s):  
M. Bescond ◽  
N. Cavassilas ◽  
K. Kalna ◽  
K. Nehari ◽  
L. Raymond ◽  
...  
Keyword(s):  
Ballistic Transport ◽  
Gaas Nanowire ◽  
Nanowire Mosfets

PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs

2009 ◽  
Vol 19 (01) ◽  
pp. 15-22
Author(s):  
LINGQUAN (DENNIS) WANG ◽  
BO YU ◽  
PETER M. ASBECK ◽  
YUAN TAUR ◽  
MARK RODWELL
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Ballistic Transport ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Performance Comparison ◽  
Electron Velocity ◽  
Ballistic Limit ◽  
Saturation Current ◽  
Nanowire Mosfets

This paper describes analysis and simulations of Si and III-V Gate-All-Around nanowire MOSFETS assuming ballistic or quasi-ballistic transport. It is found that either channel material can provide the higher saturation current depending on the oxide thickness. For effective oxide thickness above approximately 0.5nm, the higher electron velocity of III-V's outweighs the higher density of states available in the Si device associated with higher effective mass and valley degeneracy and result in higher current for the III-V device. However, materials with higher effective mass and valley degeneracy result in smaller on-resistance in ballistic limit. Depending on the gate oxide capacitance, valley degeneracy may influence the attainable saturation current in a positive or negative way.

A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs

2013 ◽  
Vol 30 (11) ◽  
pp. 117102
Author(s):  
Li-Ning Zhang ◽  
Jin-He Mei ◽  
Xiang-Yu Zhang ◽  
Jin Tao ◽  
Yue Hu ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ballistic Transport ◽  
Transport Models ◽  
Nanowire Mosfets
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