Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs
2011 ◽
Vol 58
(11)
◽
pp. 3829-3836
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Keyword(s):
2015 ◽
Vol 62
(11)
◽
pp. 3547-3553
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2008 ◽
Vol 47
(1)
◽
pp. 26-30
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Investigation of discrete dopant induced variability in silicon nanowire MOSFETs using 3D simulation
2014 ◽
Vol 11
(1/2/3/4)
◽
pp. 40
2005 ◽
Vol 74
(1)
◽
pp. 412-416
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Keyword(s):