First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon

2008 ◽  
Vol 47 (1) ◽  
pp. 26-30 ◽  
Author(s):  
Shin Yabuuchi ◽  
Eiji Ohta ◽  
Hiroyuki Kageshima
1996 ◽  
Vol 421 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama

AbstractSubband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k.p theory. First-principles calculations are used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance.


2016 ◽  
Vol 18 (9) ◽  
pp. 6831-6838 ◽  
Author(s):  
Maziar Behtash ◽  
Safdar Nazir ◽  
Yaqin Wang ◽  
Kesong Yang

First-principles calculations predict the normalized electron carrier density (μ/μ0), the mobility (m*/m0), and the conductivity (σ/σ0) in LaAlO3/SrTiO3as a function of uniaxial strain.


2014 ◽  
Vol 104 (24) ◽  
pp. 242403 ◽  
Author(s):  
Zahra Torbatian ◽  
Taisuke Ozaki ◽  
Shinji Tsuneyuki ◽  
Yoshihiro Gohda

Crystals ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 58 ◽  
Author(s):  
Han Yan ◽  
Pei-Cheng Ku ◽  
Zhi-Yin Gan ◽  
Sheng Liu ◽  
Peng Li

2011 ◽  
Vol 25 (11) ◽  
pp. 823-830 ◽  
Author(s):  
BAIHUA GONG ◽  
XIN-HUI ZHANG ◽  
ER-HU ZHANG ◽  
SHENG-LI ZHANG

Tuning the spin-orbit coupling (SOC) in graphene is highly desired for its application in spintronics. In this paper, we calculated the band gap induced by SOC in graphene under uniaxial strain from a tight-binding model, and found that the band gap has a monotonic increasing dependence on the strain in the range of -20% to 15%. Our results suggest that strain can be used as a reversible and controllable way to tune the SOC in graphene. First-principles calculations were performed, confirming the results of tight-binding approximation.


2010 ◽  
Vol 59 (6) ◽  
pp. 4303
Author(s):  
Lu Zhi-Peng ◽  
Zhu Wen-Jun ◽  
Lu Tie-Cheng ◽  
Liu Shao-Jun ◽  
Cui Xin-Lin ◽  
...  

Author(s):  
Qinqiang Zhang ◽  
Meng Yang ◽  
Ken Suzuki ◽  
Hideo Miura

A nano-scale strip of graphene is known as graphene nano-ribbon (GNR). Previous studies have shown that the armchair-type GNR (aGNR) can open the electronic band gap at room temperature, and the band gap increases monotonically with the decrease in the width of aGNR. The critical width at which aGNR shows semi-conductive characteristics at room temperature is about 70 nm, when it is passivated by hydrogen on both sides. However, the electronic band structure varies frequently as a function of the number of carbon atoms along its width direction. In order to decrease the large variation of the band gap of aGNR to control the electronic properties of GNR for highly sensitive sensors and high performance devices, the electronic band structure of various dumbbell-shape structure of aGNR was analyzed by first-principles calculations based on the density functional theory using implemented in SIESTA package. It was shown that the width of aGNR had a large effect on the electronic band structure and the amplitude of the fluctuation of the band gap as a function of the number of carbon atoms decreased drastically. The electronic band structure of various GNRs under the application of uniaxial strain was also analyzed by using the first-principles calculations, in this study. It was confirmed that the effective band gap of aGNR thinner than 70 nm varies drastically under the application of uniaxial strain, and this result clearly indicates the possibility of a highly sensitive strain sensor using dumbbell-shape GNR structures.


RSC Advances ◽  
2019 ◽  
Vol 9 (23) ◽  
pp. 13133-13144 ◽  
Author(s):  
Qing-Yuan Chen ◽  
Ming-yang Liu ◽  
Chao Cao ◽  
Yao He

The optical properties, structural properties and electronic properties of a new two-dimensional (2D) monolayer C3N under different strains are studied in this paper by using first-principles calculations.


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