scholarly journals Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

2010 ◽  
Vol 7 (19) ◽  
pp. 1499-1503 ◽  
Author(s):  
Seongjae Cho ◽  
In Man Kang ◽  
Kyung Rok Kim
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets

Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

2008 ◽  
Author(s):  
B. H. Hong ◽  
Y. C. Jung ◽  
S. W. Hwang ◽  
K. H. Cho ◽  
K. H. Yeo ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets

Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes

2015 ◽  
Vol 62 (11) ◽  
pp. 3547-3553 ◽  
Author(s):  
Yawei Lv ◽  
Hao Wang ◽  
Sheng Chang ◽  
Jin He ◽  
Qijun Huang
Keyword(s):  
Band Structure ◽  
Cross Section ◽  
Silicon Nanowire ◽  
Nanowire Mosfets

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

2010 ◽  
Vol 57 (11) ◽  
pp. 2864-2871 ◽  
Author(s):  
Tao Yu ◽  
Runsheng Wang ◽  
Ru Huang ◽  
Jiang Chen ◽  
Jing Zhuge ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Line Edge Roughness ◽  
Edge Roughness ◽  
Nanowire Mosfets

Extremely Small Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire MOSFETs

2011 ◽  
Author(s):  
K. Mao ◽  
T. Mizutani ◽  
A. Kumar ◽  
T. Saraya ◽  
T. Hiramoto
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets

Performance Improvement by Stress Memorization Technique in Trigate Silicon Nanowire MOSFETs

2012 ◽  
Vol 33 (1) ◽  
pp. 8-10 ◽  
Author(s):  
Masumi Saitoh ◽  
Yukio Nakabayashi ◽  
Kensuke Ota ◽  
Ken Uchida ◽  
Toshinori Numata
Keyword(s):  
Performance Improvement ◽  
Silicon Nanowire ◽  
Nanowire Mosfets

3D quantum mechanical simulation of square nanowire MOSFETs by using NEGF method

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Esmaeil Dastjerdy ◽  
Rahim Ghayour ◽  
Hojjat Sarvari
Keyword(s):  
Transport Model ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Transverse Dimension ◽  
Quantum Mechanical ◽  
Consistent Solution ◽  
Nanowire Mosfets ◽  
Quantum Mechanical Approach ◽  
Silicon Nanowire Mosfet ◽  
Nanowire Mosfet

AbstractIn order to investigate the specifications of nanoscale transistors, we have used a three dimensional (3D) quantum mechanical approach to simulate square cross section silicon nanowire (SNW) MOSFETs. A three dimensional simulation of silicon nanowire MOSFET based on self consistent solution of Poisson-Schrödinger equations is implemented. The quantum mechanical transport model of this work uses the non-equilibrium Green’s function (NEGF) formalism. First, we simulate a double-gate (DG) silicon nanowire MOSFET and compare the results with those obtained from nanoMOS simulation. We understand that when the transverse dimension of a DG nanowire is reduced to a few nanometers, quantum confinement in that direction becomes important and 3D Schrödinger equation must be solved. Second, we simulate gate-all-around (GAA) silicon nanowire MOSFETs with different shapes of gate. We have investigated GAA-SNW-MOSFET with an octagonal gate around the wire and found out it is more suitable than a conventional GAA MOSFET for its more I on/I off, less Drain-Induced-Barrier-Lowering (DIBL) and less subthreshold slope.

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