Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes

2015 ◽  
Vol 62 (11) ◽  
pp. 3547-3553 ◽  
Author(s):  
Yawei Lv ◽  
Hao Wang ◽  
Sheng Chang ◽  
Jin He ◽  
Qijun Huang
Keyword(s):  
Band Structure ◽  
Cross Section ◽  
Silicon Nanowire ◽  
Nanowire Mosfets

Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

2008 ◽  
Author(s):  
B. H. Hong ◽  
Y. C. Jung ◽  
S. W. Hwang ◽  
K. H. Cho ◽  
K. H. Yeo ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets

Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization

2019 ◽  
Vol 13 (1) ◽  
pp. 195-199 ◽  
Author(s):  
Alexandre Hubert ◽  
Jean-Philippe Colonna ◽  
Stéphane Bécu ◽  
Cécilia Dupré ◽  
Virginie Maffini-Alvaro ◽  
...  
Keyword(s):  
Shape Optimization ◽  
Cross Section ◽  
Silicon Nanowire ◽  
Cross Section Shape ◽  
Section Shape

scholarly journals Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

2010 ◽  
Vol 7 (19) ◽  
pp. 1499-1503 ◽  
Author(s):  
Seongjae Cho ◽  
In Man Kang ◽  
Kyung Rok Kim
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets

scholarly journals High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

2018 ◽  
Vol 8 (9) ◽  
pp. 1553 ◽  
Author(s):  
Ming Li ◽  
Gong Chen ◽  
Ru Huang
Keyword(s):  
Cross Section ◽  
High Performance ◽  
Silicon Nanowire ◽  
Wet Etching ◽  
Excellent Performance ◽  
Cross Sectional ◽  
Triangular Cross Section ◽  
Tcad Simulation ◽  
Equivalent Distance ◽  
20 Nm

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section.

scholarly journals Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

2019 ◽  
Vol 9 (9) ◽  
pp. 1895 ◽  
Author(s):  
Oves Badami ◽  
Cristina Medina-Bailon ◽  
Salim Berrada ◽  
Hamilton Carrillo-Nunez ◽  
Jaeyhun Lee ◽  
...  
Keyword(s):  
Band Structure ◽  
Cross Section ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Simulation Software ◽  
Cross Sectional ◽  
Electronic Band ◽  
Effective Masses ◽  
Simulation Engine ◽  
Silicon Based

The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobility. In this article, we present a methodology for the extraction of the electron effective masses, in both confinement and the transport directions, from the simulated electronic band structure of the nanowire channel. This methodology has been implemented in our in-house three-dimensional (3D) simulation engine, NESS (Nano-Electronic Simulation Software). We provide comprehensive data for the effective masses of the silicon-based nanowire transistors (NWTs) with technologically relevant cross-sectional area and transport orientations. We demonstrate the importance of the correct effective masses by showing its impact on mobility and transfer characteristics.

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

2010 ◽  
Vol 57 (11) ◽  
pp. 2864-2871 ◽  
Author(s):  
Tao Yu ◽  
Runsheng Wang ◽  
Ru Huang ◽  
Jiang Chen ◽  
Jing Zhuge ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Line Edge Roughness ◽  
Edge Roughness ◽  
Nanowire Mosfets

Extremely Small Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire MOSFETs

2011 ◽  
Author(s):  
K. Mao ◽  
T. Mizutani ◽  
A. Kumar ◽  
T. Saraya ◽  
T. Hiramoto
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Mosfets
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