Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

Kwan Yup Shin; Young Jun Tak; Won-Gi Kim; Seonghwan Hong; Hyun Jae Kim

doi:10.1021/acsami.7b00257

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00257 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13278-13285 ◽

Cited By ~ 26

Author(s):

Kwan Yup Shin ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Seonghwan Hong ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Download Full-text

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.08.104 ◽

2011 ◽

Vol 520 (5) ◽

pp. 1608-1611 ◽

Cited By ~ 15

Author(s):

Geng-Wei Chang ◽

Ting-Chang Chang ◽

Yong-En Syu ◽

Tsung-Ming Tsai ◽

Kuan-Chang Chang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Bottom Gate

Download Full-text

Effects of Tantalum Doping on Electrical Characteristics of Indium-Gallium-Zinc Oxide Thin-Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2020-02281929mtgabs ◽

2020 ◽

Vol MA2020-02 (28) ◽

pp. 1929-1929

Author(s):

Seung-Ryum Baek ◽

Tae-Yeon Seong

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Download Full-text

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Scientific Reports ◽

10.1038/s41598-017-16585-x ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 21

Author(s):

Seonghwan Hong ◽

Sung Pyo Park ◽

Yeong-gyu Kim ◽

Byung Ha Kang ◽

Jae Won Na ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Download Full-text

Effect of ${\hbox{SiO}}_{2}$ and/or ${\hbox{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Journal of Display Technology ◽

10.1109/jdt.2013.2244846 ◽

2013 ◽

Vol 9 (9) ◽

pp. 699-703 ◽

Cited By ~ 7

Author(s):

Dong Han Kang ◽

In Kang ◽

Sang Hyun Ryu ◽

Young Sik Ahn ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thermal Stability ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Thermal Stability Of

Download Full-text

Effect of Exposure to Ultraviolet-Activated Oxygen on the Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

ECS Solid State Letters ◽

10.1149/2.005304ssl ◽

2013 ◽

Vol 2 (4) ◽

pp. Q21-Q24 ◽

Cited By ~ 19

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Activated Oxygen ◽

Indium Gallium

Download Full-text

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2013.1479 ◽

2013 ◽

Vol 8 (4) ◽

pp. 361-365 ◽

Cited By ~ 1

Author(s):

Sheng-Po Chang ◽

Tsung-Han Yang ◽

Chao-Jen Ho ◽

Shoou-Jinn Chang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Oxygen Partial Pressure ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Effect Of Oxygen

Download Full-text

Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3168522 ◽

2009 ◽

Vol 12 (9) ◽

pp. H348 ◽

Cited By ~ 44

Author(s):

Hyun-Sik Seo ◽

Jong-Uk Bae ◽

Dae-Hwan Kim ◽

YuJin Park ◽

Chang-Dong Kim ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Bottom Gate

Download Full-text

Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

10.7567/ssdm.2010.i-5-4 ◽

2010 ◽

Author(s):

S. H. Choi ◽

Y. W. Lee ◽

J. Y. Kwon ◽

M. K. Han

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Download Full-text

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00275-z ◽

2021 ◽

Author(s):

Abdelhafid Marroun ◽

Naima Amar Touhami ◽

Taj-eddin El Hamadi

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Conduction Band ◽

Physical Modeling ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Download Full-text

Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Journal of Materials Chemistry C ◽

10.1039/c8tc90192a ◽

2018 ◽

Vol 6 (38) ◽

pp. 10376-10376

Author(s):

Hyukjoon Yoo ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Yeong-gyu Kim ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

Download Full-text