A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

2011 ◽  
Vol 58 (11) ◽  
pp. 3920-3924 ◽  
Author(s):  
Jung-Hsiang Lee ◽  
Yi-Chang Lin ◽  
Ming-Yu Chen
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Bottom Electrode ◽  
Cost Effective ◽  
Metal Insulator ◽  
Metal Insulator Metal

Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

2018 ◽  
Author(s):  
D. Birmpiliotis ◽  
M. Koutsoureli ◽  
L. Buhagier ◽  
G. Papaioannou ◽  
A. Ziaei
Keyword(s):  
Bottom Electrode ◽  
Single Layer ◽  
Capacitive Switches ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Low Dielectric ◽  
Insulator Film ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Abstract Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.

Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

2007 ◽  
Vol 46 (4B) ◽  
pp. 1968-1973 ◽  
Author(s):  
Naoya Inoue ◽  
Ippei Kume ◽  
Jun Kawahara ◽  
Shinobu Saito ◽  
Naoya Furutake ◽  
...  
Keyword(s):  
High Speed ◽  
Bottom Electrode ◽  
Metal Insulator ◽  
Decoupling Capacitors ◽  
Surface Control ◽  
Metal Insulator Metal

Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode

2019 ◽  
Vol 33 (2) ◽  
pp. 83-90
Author(s):  
Cheng-Ming Lin ◽  
Yen-Ting Chen ◽  
Cheng-Han Lee ◽  
Hung-Chih Chang ◽  
Wei-Chiang Chang ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Metal Insulator ◽  
Metal Insulator Metal

Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal–Insulator–Metal Capacitors Using TiN Bottom Electrode

2010 ◽  
Vol 49 (4) ◽  
pp. 04DD01 ◽  
Author(s):  
Nicolas Menou ◽  
Mihaela Popovici ◽  
Karl Opsomer ◽  
Ben Kaczer ◽  
Malgorzata A. Pawlak ◽  
...  
Keyword(s):  
Seed Layer ◽  
Bottom Electrode ◽  
Metal Insulator ◽  
Metal Insulator Metal
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