Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

2007 ◽  
Vol 46 (4B) ◽  
pp. 1968-1973 ◽  
Author(s):  
Naoya Inoue ◽  
Ippei Kume ◽  
Jun Kawahara ◽  
Shinobu Saito ◽  
Naoya Furutake ◽  
...  
Keyword(s):  
High Speed ◽  
Bottom Electrode ◽  
Metal Insulator ◽  
Decoupling Capacitors ◽  
Surface Control ◽  
Metal Insulator Metal

Shock-squeezed metal-insulator-metal films at high-speed impacts of micrometeoroid and technogenic particles

2005 ◽  
Vol 48 (2) ◽  
pp. 250-255 ◽  
Author(s):  
N. D. Semkin ◽  
K. E. Voronov ◽  
L. S. Novikov ◽  
N. L. Bogoyavlenskii
Keyword(s):  
High Speed ◽  
Metal Films ◽  
Metal Insulator ◽  
Metal Insulator Metal

Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

2018 ◽  
Author(s):  
D. Birmpiliotis ◽  
M. Koutsoureli ◽  
L. Buhagier ◽  
G. Papaioannou ◽  
A. Ziaei
Keyword(s):  
Bottom Electrode ◽  
Single Layer ◽  
Capacitive Switches ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Low Dielectric ◽  
Insulator Film ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Abstract Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.

scholarly journals Design and modelling of all-optical NAND gate using metal-insulator-metal (MIM) waveguides based Mach- Zehnder Interferometers for high-speed information processing

2021 ◽  
Author(s):  
Sandip Swarnakar ◽  
Siva Koti Reddy ◽  
Ramanand Harijan ◽  
Santosh Kumar
Keyword(s):  
Information Processing ◽  
Integrated Circuits ◽  
High Speed ◽  
Extinction Ratio ◽  
Logic Gates ◽  
Nand Gate ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
All Optical ◽  
Mathematical Computation

Abstract All the basic logic gates play a major role in carrying out the mathematical computation. The drawbacks of conventional electronics are alleviated by all-optical integrated circuits with a great application of high-speed computing and information processing. In this paper, plasmonic metal-insulator-metal (MIM) waveguides have an excellent property of propagating the surface plasmons beyond the diffraction limit up to deep sub-wavelength scale. All-optical NAND gate design is optimized by using MIM plasmonic waveguide-based Mach-Zehnder Interferometers (MZIs) in the footprint of 36 µm × 8 µm that works at 1.55 µm operating wavelength. The better performance of the proposed device is achieved, such as the extinction ratio is 10.55 dB, insertion loss is obtained as 0.506 dB, and response time is 262 ps. The proposed design is verified by using the finite-difference time-domain (FDTD) technique and further analysis are carried out by mathematical computation and MATLAB simulation results.

Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode

2019 ◽  
Vol 33 (2) ◽  
pp. 83-90
Author(s):  
Cheng-Ming Lin ◽  
Yen-Ting Chen ◽  
Cheng-Han Lee ◽  
Hung-Chih Chang ◽  
Wei-Chiang Chang ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Metal Insulator ◽  
Metal Insulator Metal
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