Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs

2009 ◽  
Author(s):  
Wataru Saito ◽  
Takao Noda ◽  
Masahiko Kuraguchi ◽  
Yoshiharu Takada ◽  
Kunio Tsuda ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Leakage Current ◽  
High Voltage ◽  
Layer Structure ◽  
Current Collapse ◽  
Gan Hemts

Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

2016 ◽  
Vol 13 (5-6) ◽  
pp. 341-344 ◽  
Author(s):  
Naohiro Noda ◽  
Ryouhei Tsurumaki ◽  
Kazushige Horio
Keyword(s):  
Buffer Layer ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer

scholarly journals Influence of barrier design on current collapse in high voltage AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
S. DasGupta ◽  
L. Biedermann ◽  
M. Sun ◽  
R. J. Kaplar ◽  
M. J. Marinella ◽  
...  
Keyword(s):  
High Voltage ◽  
Current Collapse ◽  
Gan Hemts

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

2013 ◽  
Vol 34 (3) ◽  
pp. 366-368 ◽  
Author(s):  
Zhikai Tang ◽  
Sen Huang ◽  
Qimeng Jiang ◽  
Shenghou Liu ◽  
Cheng Liu ◽  
...  
Keyword(s):  
High Voltage ◽  
Low Leakage ◽  
Current Collapse ◽  
Gan Hemts

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

2010 ◽  
Vol 31 (7) ◽  
pp. 659-661 ◽  
Author(s):  
Wataru Saito ◽  
Yorito Kakiuchi ◽  
Tomohiro Nitta ◽  
Yasunobu Saito ◽  
Takao Noda ◽  
...  
Keyword(s):  
High Voltage ◽  
Structure Dependence ◽  
Plate Structure ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

2020 ◽  
Vol 67 (12) ◽  
pp. 5454-5459
Author(s):  
Xuan Li ◽  
Shiwei Feng ◽  
Chang Liu ◽  
Yamin Zhang ◽  
Kun Bai ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Voltage ◽  
Measurement Method ◽  
Resistance Measurement ◽  
Gan Hemts
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