scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer

Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

2019 ◽  
Vol 28 (10) ◽  
pp. 107301 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Bao-Hua Zhang ◽  
Dun-Jun Chen ◽  
Li-Qun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs

2017 ◽  
Vol 215 (2) ◽  
pp. 1700368 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Baohua Zhang ◽  
Dunjun Chen ◽  
Liqun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Trap Level ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

2015 ◽  
Vol 212 (8) ◽  
pp. 1742-1745 ◽  
Author(s):  
Máire Power ◽  
James W. Pomeroy ◽  
Yohei Otoki ◽  
Takeshi Tanaka ◽  
Jiro Wada ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped

Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

2016 ◽  
Vol 13 (5-6) ◽  
pp. 341-344 ◽  
Author(s):  
Naohiro Noda ◽  
Ryouhei Tsurumaki ◽  
Kazushige Horio
Keyword(s):  
Buffer Layer ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer

2019 ◽  
Vol 215 ◽  
pp. 110985 ◽  
Author(s):  
Ki-Sik Im ◽  
Jinseok Choi ◽  
Youngmin Hwang ◽  
Sung Jin An ◽  
Jea-Seung Roh ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Gan Buffer Layer
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