Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

2016 ◽  
Vol 13 (5-6) ◽  
pp. 341-344 ◽  
Author(s):  
Naohiro Noda ◽  
Ryouhei Tsurumaki ◽  
Kazushige Horio
Keyword(s):  
Buffer Layer ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs

2009 ◽  
Vol 6 (S2) ◽  
pp. S929-S932
Author(s):  
Atsushi Nakajima ◽  
Keiichi Itagaki ◽  
Kazushige Horio
Keyword(s):  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer

Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs

2012 ◽  
Vol 9 (7) ◽  
pp. 1655-1657 ◽  
Author(s):  
Kazushige Horio ◽  
Hiraku Onodera
Keyword(s):  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document