Analytical Model and Current Gain Enhancement of Polysilicon-Emitter Contact Bipolar Transistors

2008 ◽  
Vol 55 (11) ◽  
pp. 3214-3220 ◽  
Author(s):  
Abdelaziz Zouari ◽  
Abdel Ben Arab
Keyword(s):  
Analytical Model ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Gain Enhancement ◽  
Polysilicon Emitter

Integration of Si-MBE and Device Processing

1991 ◽  
Vol 220 ◽  
Author(s):  
D. J. Gravesteijn ◽  
G. F. A. Van De Walle ◽  
A. Pruijmboom ◽  
A. A. Van Gorkum
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Detrimental Effect ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Gain Enhancement ◽  
Transient Diffusion ◽  
Device Processing ◽  
Background Doping ◽  
The Stability

ABSTRACTA review is given of the requirements on MBE-grown layers as far as processing is concerned. Aspects that are considered are: defect density, particulates, background doping and metallic contamination. The stability of the grown layers against thermal anneals is considered. It is shown that normal thermal diffusion in HBT structures is not important, other effects, like transient diffusion following ion implantation, have drastic effects on the grown profiles. As an example the processing of mesa-isolated heterojunction bipolar transistors is treated. It is shown that all-Si transistors can be grown with ideal Gummel plots. The Gummel plots of SiGe HBTs show small non-idealities. The current gain enhancement of the HBTs with respect to the all-Si transistors is shown to be as large as 200 times. Due to transient diffusion, parasitic barriers are formed, that have a detrimental effect on the AC and DC performance.

Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors

1994 ◽  
Vol 11 (3) ◽  
pp. 277-283
Author(s):  
Huang Liuxing ◽  
Wei Tongli ◽  
Zheng Jiang ◽  
Cao Juncheng
Keyword(s):  
Low Temperature ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter

Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter

1991 ◽  
Vol 58 (18) ◽  
pp. 2009-2011 ◽  
Author(s):  
B. Jalali ◽  
C. A. King ◽  
G. S. Higashi ◽  
J. C. Bean ◽  
R. Hull ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Bipolar Transistors ◽  
Low Energy ◽  
Current Gain ◽  
Ion Beam Modification ◽  
Gain Enhancement

A comprehensive semi-analytical model of the polysilicon emitter contact in bipolar transistors

2017 ◽  
Vol 17 (1) ◽  
pp. 246-255
Author(s):  
A. Zekry ◽  
A. Shaker ◽  
M. Ossaimee ◽  
M. S. Salem ◽  
M. Abouelatta
Keyword(s):  
Analytical Model ◽  
Bipolar Transistors ◽  
Polysilicon Emitter

Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors

1992 ◽  
Vol 39 (6) ◽  
pp. 1392-1397 ◽  
Author(s):  
A. Nouailhat ◽  
G. Giroult-Matlakowski ◽  
A. Marty ◽  
N. Degors ◽  
M.-D. Bruni ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Geometry Effects ◽  
Polysilicon Emitter

Effect of rapid epitaxy in in situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors

1996 ◽  
Vol 43 (8) ◽  
pp. 1281-1285 ◽  
Author(s):  
T. Shiba ◽  
M. Kondo ◽  
T. Uchino ◽  
H. Murakoshi ◽  
Y. Tamaki
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter ◽  
Phosphorus Doped
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