Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors

1994 ◽  
Vol 11 (3) ◽  
pp. 277-283
Author(s):  
Huang Liuxing ◽  
Wei Tongli ◽  
Zheng Jiang ◽  
Cao Juncheng
Keyword(s):  
Low Temperature ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

2001 ◽  
Vol 37 (6) ◽  
pp. 393 ◽  
Author(s):  
J.J. Huang ◽  
D. Caruth ◽  
M. Feng ◽  
D.J.H. Lambert ◽  
B.S. Shelton ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Emitter Current ◽  
Temperature Study

scholarly journals Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistors

1994 ◽  
Vol 04 (C6) ◽  
pp. C6-111-C6-115
Author(s):  
G. Giroult-Matlakowski ◽  
H. Bousseta ◽  
B. Le Tron ◽  
D. Dutartre ◽  
P. Warren ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Temperature Performance ◽  
Low Temperature Performance ◽  
Polysilicon Emitter

Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors

1992 ◽  
Vol 39 (6) ◽  
pp. 1392-1397 ◽  
Author(s):  
A. Nouailhat ◽  
G. Giroult-Matlakowski ◽  
A. Marty ◽  
N. Degors ◽  
M.-D. Bruni ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Geometry Effects ◽  
Polysilicon Emitter

Effect of rapid epitaxy in in situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors

1996 ◽  
Vol 43 (8) ◽  
pp. 1281-1285 ◽  
Author(s):  
T. Shiba ◽  
M. Kondo ◽  
T. Uchino ◽  
H. Murakoshi ◽  
Y. Tamaki
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter ◽  
Phosphorus Doped
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