Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter

1991 ◽  
Vol 58 (18) ◽  
pp. 2009-2011 ◽  
Author(s):  
B. Jalali ◽  
C. A. King ◽  
G. S. Higashi ◽  
J. C. Bean ◽  
R. Hull ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Bipolar Transistors ◽  
Low Energy ◽  
Current Gain ◽  
Ion Beam Modification ◽  
Gain Enhancement

Composite Nanowires from Ion Beam Modification of Si Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ions ◽  
Si Nanowires ◽  
Interacting Particles ◽  
Ion Beam Modification ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

Low Energy Ion Beam Modification of High Performance Polymer

1991 ◽  
Vol 236 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White
Keyword(s):  
High Performance ◽  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Chemical Compositions ◽  
Interface Chemistry ◽  
Damage Level ◽  
Ion Beam Modification ◽  
Control Interface ◽  
High Performance Polymer

AbstractIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.

Low Energy Ion Beam Modification of High Performance Polymer

1991 ◽  
Vol 235 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White
Keyword(s):  
High Performance ◽  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Chemical Compositions ◽  
Interface Chemistry ◽  
Damage Level ◽  
Ion Beam Modification ◽  
Control Interface ◽  
High Performance Polymer

ABSTRACTIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.

Integration of Si-MBE and Device Processing

1991 ◽  
Vol 220 ◽  
Author(s):  
D. J. Gravesteijn ◽  
G. F. A. Van De Walle ◽  
A. Pruijmboom ◽  
A. A. Van Gorkum
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Detrimental Effect ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Gain Enhancement ◽  
Transient Diffusion ◽  
Device Processing ◽  
Background Doping ◽  
The Stability

ABSTRACTA review is given of the requirements on MBE-grown layers as far as processing is concerned. Aspects that are considered are: defect density, particulates, background doping and metallic contamination. The stability of the grown layers against thermal anneals is considered. It is shown that normal thermal diffusion in HBT structures is not important, other effects, like transient diffusion following ion implantation, have drastic effects on the grown profiles. As an example the processing of mesa-isolated heterojunction bipolar transistors is treated. It is shown that all-Si transistors can be grown with ideal Gummel plots. The Gummel plots of SiGe HBTs show small non-idealities. The current gain enhancement of the HBTs with respect to the all-Si transistors is shown to be as large as 200 times. Due to transient diffusion, parasitic barriers are formed, that have a detrimental effect on the AC and DC performance.

Influence of low-energy ion-beam treatment by hydrogen on electrical activity of grain boundaries in polycrystalline silicon

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 269-272 ◽  
Author(s):  
A. Saad ◽  
A. Mazanik ◽  
A. Fedotov ◽  
J. Partyka ◽  
P. Węgierek ◽  
...  
Keyword(s):  
Electrical Activity ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Treatment

Comparative study on low energy ion beam modification of thermoplastic polymers

2019 ◽  
Vol 174 (5-6) ◽  
pp. 406-418 ◽  
Author(s):  
P.M. Raveesha ◽  
K. Hareesh ◽  
S.D. Dhole ◽  
K. Asokan ◽  
Ganesh Sanjeev
Keyword(s):  
Comparative Study ◽  
Ion Beam ◽  
Low Energy ◽  
Thermoplastic Polymers ◽  
Ion Beam Modification
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