Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

Kuan-Wei Lee; Kai-Lin Lee; Xian-Zheng Lin; Chao-Hsien Tu; Yeong-Her Wang

doi:10.1109/ted.2006.890599

Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.890599 ◽

2007 ◽

Vol 54 (3) ◽

pp. 418-424 ◽

Cited By ~ 20

Author(s):

Kuan-Wei Lee ◽

Kai-Lin Lee ◽

Xian-Zheng Lin ◽

Chao-Hsien Tu ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Subthreshold Current ◽

Ionization Effect

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Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C ◽

10.1039/d0tc04725b ◽

2021 ◽

Author(s):

Dong Gun Kim ◽

Cheol Hyun An ◽

Sanghyeon Kim ◽

Dae Seon Kwon ◽

Junil Lim ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Tio2 Film ◽

Single Layer ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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Field and temperature effects on oxide charge detrapping in a metal–oxide–semiconductor field effect transistor by measuring a subthreshold current transient

Applied Physics Letters ◽

10.1063/1.119730 ◽

1997 ◽

Vol 71 (8) ◽

pp. 1068-1070 ◽

Cited By ~ 1

Author(s):

Lu-Ping Chiang ◽

N. K. Zous ◽

Tahui Wang ◽

T. E. Chang ◽

K. Y. Shen ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Effects ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Current Transient ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Subthreshold Current ◽

Effect Transistor

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Cited By ~ 16

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal‐oxide‐semiconductor device characteristics and experimental results

Journal of Applied Physics ◽

10.1063/1.354157 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5859-5866 ◽

Cited By ~ 3

Author(s):

Syunji Imanaga ◽

Kunio Hane ◽

Yoshinori Hayafuji

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Inverse Modeling ◽

Impact Ionization ◽

Semiconductor Device ◽

Ionization Rate ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Impact Ionization Rate

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Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator

10.7567/ssdm.2010.a-9-1 ◽

2010 ◽

Cited By ~ 1

Author(s):

M. Liao ◽

Y. U. Song ◽

J. Ishikawa ◽

T. Sano ◽

J. Gao ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Interface Properties

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.2798064 ◽

2007 ◽

Vol 91 (15) ◽

pp. 153501 ◽

Cited By ~ 8

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Performance Enhancement ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Ionization Threshold ◽

Oxide Semiconductor ◽

Threshold Energies

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Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Materials Science and Engineering B ◽

10.1016/j.mseb.2005.01.005 ◽

2005 ◽

Vol 119 (1) ◽

pp. 36-40 ◽

Cited By ~ 13

Author(s):

K. Balachander ◽

S. Arulkumaran ◽

T. Egawa ◽

Y. Sano ◽

K. Baskar

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

Applied Physics Letters ◽

10.1063/1.1811793 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4214-4216 ◽

Cited By ~ 17

Author(s):

C. S. Oh ◽

C. J. Youn ◽

G. M. Yang ◽

K. Y. Lim ◽

J. W. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Effect Transistor

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Comments on "17.3% Efficiency Metal-oxide-semiconductor (MOS) Solar Cells With Liquid-phase-deposited Silicon Dioxide"

IEEE Electron Device Letters ◽

10.1109/led.1998.728908 ◽

1998 ◽

Vol 19 (11) ◽

pp. 447-447

Author(s):

A. Rohatgi ◽

J. Moschner

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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