AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator

2004 ◽  
Vol 85 (18) ◽  
pp. 4214-4216 ◽  
Author(s):  
C. S. Oh ◽  
C. J. Youn ◽  
G. M. Yang ◽  
K. Y. Lim ◽  
J. W. Yang
2001 ◽  
Vol 37 (11) ◽  
pp. 715 ◽  
Author(s):  
T. Rotter ◽  
D. Mistele ◽  
J. Stemmer ◽  
M. Seyboth ◽  
V. Schwegler ◽  
...  

2000 ◽  
Vol 21 (2) ◽  
pp. 63-65 ◽  
Author(s):  
M.A. Khan ◽  
X. Hu ◽  
G. Sumin ◽  
A. Lunev ◽  
J. Yang ◽  
...  

2002 ◽  
Vol 41 (Part 2, No. 7A) ◽  
pp. L748-L750 ◽  
Author(s):  
Dei-Wei Chou ◽  
Kuan-Wei Lee ◽  
Jian-Jun Huang ◽  
Hou-Run Wu ◽  
Yeong-Her Wang ◽  
...  

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