AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

Chih-Chun Hu; Mon-Sen Lin; Tsu-Yi Wu; Feri Adriyanto; Po-Wen Sze; Chang-Luen Wu; Yeong-Her Wang

doi:10.1109/ted.2011.2171690

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Cited By ~ 16

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Journal of The Electrochemical Society ◽

10.1149/1.3473782 ◽

2010 ◽

Vol 157 (10) ◽

pp. H947 ◽

Cited By ~ 13

Author(s):

Sarbani Basu ◽

Pramod K. Singh ◽

Po-Wen Sze ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2004.07.011 ◽

2005 ◽

Vol 49 (2) ◽

pp. 213-217 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yeong-Her Wang ◽

Mau-Phon Houng

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.1861122 ◽

2005 ◽

Vol 86 (6) ◽

pp. 063501 ◽

Cited By ~ 351

Author(s):

P. D. Ye ◽

B. Yang ◽

K. K. Ng ◽

J. Bude ◽

G. D. Wilk ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1435305 ◽

2005 ◽

Author(s):

Kuan-Wei Lee ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Yu-Chang Lee ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Solid-State Electronics ◽

10.1016/j.sse.2013.01.020 ◽

2013 ◽

Vol 82 ◽

pp. 1-5 ◽

Cited By ~ 7

Author(s):

Tsu-Yi Wu ◽

Chih-Chun Hu ◽

Po-Wen Sze ◽

Tong-Jyun Huang ◽

Feri Adriyanto ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Strontium Titanate ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2013314 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1943 ◽

Cited By ~ 8

Author(s):

Chin-Chuan Cheng ◽

Yan-Ying Tsai ◽

Kun-Wei Lin ◽

Huey-Ing Chen ◽

Wei-Hsi Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Hydrogen Sensing ◽

Sensing Characteristics

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Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

IEEE Electron Device Letters ◽

10.1109/led.2015.2489228 ◽

2015 ◽

Vol 36 (12) ◽

pp. 1287-1290 ◽

Cited By ~ 52

Author(s):

Jin Wei ◽

Shenghou Liu ◽

Baikui Li ◽

Xi Tang ◽

Yunyou Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Double Channel

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Numerical simulation of metal-oxide-semiconductor metamorphic high-electron-mobility transistor

2013 International Symposium on Next-Generation Electronics ◽

10.1109/isne.2013.6512366 ◽

2013 ◽

Author(s):

Jung-Sheng Huang ◽

Kuan-Wei Lee ◽

Po-Yu Lin ◽

Yu-Hsiang Tseng ◽

Chih-Hung Tu ◽

...

Keyword(s):

Numerical Simulation ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Cited By ~ 27

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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