Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

Eng-Huat Toh; Grace Huiqi Wang; Lap Chan; Ganesh Samudra; Yee-Chia Yeo

doi:10.1063/1.2798064

Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.2798064 ◽

2007 ◽

Vol 91 (15) ◽

pp. 153501 ◽

Cited By ~ 8

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Performance Enhancement ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Ionization Threshold ◽

Oxide Semiconductor ◽

Threshold Energies

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Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Applied Physics Letters ◽

10.1063/1.2430924 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023505 ◽

Cited By ~ 14

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Guo-Qiang Lo ◽

Lap Chan ◽

Ganesh Samudra ◽

...

Keyword(s):

Metal Oxide ◽

Performance Enhancement ◽

Impact Ionization ◽

Strain Engineering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies

Journal of Materiomics ◽

10.1016/j.jmat.2019.08.003 ◽

2019 ◽

Vol 5 (4) ◽

pp. 542-557 ◽

Cited By ~ 16

Author(s):

Adeel Afzal

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Gas Sensors ◽

Performance Enhancement ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Gas Sensors ◽

And Performance

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Threshold energies of high‐field‐induced hole currents and positive charges in SiO2layers of metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.358479 ◽

1994 ◽

Vol 76 (10) ◽

pp. 5795-5799 ◽

Cited By ~ 13

Author(s):

Xiaoping Gao ◽

Sinclair S. Yee

Keyword(s):

Metal Oxide ◽

High Field ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Threshold Energies

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Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal‐oxide‐semiconductor device characteristics and experimental results

Journal of Applied Physics ◽

10.1063/1.354157 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5859-5866 ◽

Cited By ~ 3

Author(s):

Syunji Imanaga ◽

Kunio Hane ◽

Yoshinori Hayafuji

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Inverse Modeling ◽

Impact Ionization ◽

Semiconductor Device ◽

Ionization Rate ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Impact Ionization Rate

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Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.890599 ◽

2007 ◽

Vol 54 (3) ◽

pp. 418-424 ◽

Cited By ~ 20

Author(s):

Kuan-Wei Lee ◽

Kai-Lin Lee ◽

Xian-Zheng Lin ◽

Chao-Hsien Tu ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Subthreshold Current ◽

Ionization Effect

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Performance Enhancement by Local Strain in Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5715 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5715-5718

Author(s):

Wen-Cheng Lo ◽

Ya-Hsin Kuo ◽

Yao-Jen Lee ◽

Tien-Sheng Chao ◽

Chun-Yen Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Local Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

Nanoscale Research Letters ◽

10.1186/1556-276x-9-242 ◽

2014 ◽

Vol 9 (1) ◽

Cited By ~ 4

Author(s):

Hsin-Ying Lee ◽

Hung-Lin Huang ◽

Chun-Yen Tseng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Laser Interference

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Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.014104 ◽

2010 ◽

Vol 49 (1) ◽

pp. 014104

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

S. L. Liu ◽

Joseph D. S. Deng ◽

K. Y. Horng ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Performance ◽

Lightly Doped Drain ◽

Frequency Power

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Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3077 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3077-3080 ◽

Cited By ~ 1

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Ganesh S. Samudra ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Performance Optimization ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

Device Physics ◽

And Performance

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A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

Solid-State Electronics ◽

10.1016/s0038-1101(02)00458-6 ◽

2003 ◽

Vol 47 (6) ◽

pp. 995-1001 ◽

Cited By ~ 6

Author(s):

K.G. Anil ◽

S. Mahapatra ◽

I. Eisele

Keyword(s):

Experimental Investigation ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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