DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration

Wu Lu; V. Kumar; E.L. Piner; I. Adesida

doi:10.1109/ted.2003.812083

DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.812083 ◽

2003 ◽

Vol 50 (4) ◽

pp. 1069-1074 ◽

Cited By ~ 57

Author(s):

Wu Lu ◽

V. Kumar ◽

E.L. Piner ◽

I. Adesida

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Aluminum Concentration ◽

Noise Performance ◽

Microwave Noise

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On the limits of noise performance of field effect transistors

2017 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2017.8059045 ◽

2017 ◽

Cited By ~ 1

Author(s):

Marian W. Pospieszalski

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Performance

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Noise performance of gallium arsenide field-effect transistors

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.1976.1050711 ◽

1976 ◽

Vol 11 (2) ◽

pp. 243-255 ◽

Cited By ~ 33

Author(s):

R.A. Pucel ◽

D.J. Masse ◽

C.F. Krumm

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

Noise Performance

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Simulation of Temperature Dependence of Microwave Noise in Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.1690 ◽

2000 ◽

Vol 39 (Part 1, No. 4A) ◽

pp. 1690-1693 ◽

Cited By ~ 4

Author(s):

Michael S. Obrecht ◽

Tajinder Manku ◽

Mohamed I. Elmasry

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Microwave Noise

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Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc20 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC20 ◽

Cited By ~ 1

Author(s):

Cheng-Wen Kuo ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Yao-Tsung Huang ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Noise Performance ◽

Low Frequency Noise ◽

Strained Si

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Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1483 ◽

1995 ◽

Vol 34 (Part 1, No. 3) ◽

pp. 1483-1487

Author(s):

Minoru Sawada ◽

Kohji Matsumura ◽

Daijiro Inoue ◽

Hiroyuki Nakamoto ◽

Yasoo Harada

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Low Noise ◽

Noise Performance ◽

Electron Confinement

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Microwave noise characterization of graphene field effect transistors

Applied Physics Letters ◽

10.1063/1.4861115 ◽

2014 ◽

Vol 104 (1) ◽

pp. 013502 ◽

Cited By ~ 21

Author(s):

M. Tanzid ◽

M. A. Andersson ◽

J. Sun ◽

J. Stake

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Characterization ◽

Microwave Noise

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Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc20 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC20

Author(s):

Cheng-Wen Kuo ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Yao-Tsung Huang ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Noise Performance ◽

Low Frequency Noise ◽

Strained Si

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Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors

IEEE Electron Device Letters ◽

10.1109/55.372494 ◽

1995 ◽

Vol 16 (4) ◽

pp. 139-141 ◽

Cited By ~ 6

Author(s):

M. Feng ◽

D. Scherrer ◽

J. Kruse ◽

P.J. Apostolakis ◽

J.R. Middleton

Keyword(s):

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Noise Performance ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

Gas Effect

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Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric

Journal of Applied Physics ◽

10.1063/1.2837107 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033706 ◽

Cited By ~ 10

Author(s):

M. Shahriar Rahman ◽

Tanvir Morshed ◽

S. P. Devireddy ◽

Zeynep Çelik-Butler ◽

M. A. Quevedo-Lopez ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Performance ◽

Nitrogen Incorporation

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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