Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric

M. Shahriar Rahman; Tanvir Morshed; S. P. Devireddy; Zeynep Çelik-Butler; M. A. Quevedo-Lopez; A. Shanware; L. Colombo

doi:10.1063/1.2837107

Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric

Journal of Applied Physics ◽

10.1063/1.2837107 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033706 ◽

Cited By ~ 10

Author(s):

M. Shahriar Rahman ◽

Tanvir Morshed ◽

S. P. Devireddy ◽

Zeynep Çelik-Butler ◽

M. A. Quevedo-Lopez ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Performance ◽

Nitrogen Incorporation

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.10pb02 ◽

2011 ◽

Vol 50 (10S) ◽

pp. 10PB02 ◽

Cited By ~ 1

Author(s):

Takeo Matsuki ◽

Ranga Hettiarachchi ◽

Wei Feng ◽

Kenji Shiraishi ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nitrogen Incorporation

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The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

Applied Physics Letters ◽

10.1063/1.3025420 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193506 ◽

Cited By ~ 2

Author(s):

J. C. Liao ◽

Y. K. Fang ◽

C. H. Chen ◽

Y. T. Hou ◽

P. F. Hsu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Nitrogen Incorporation ◽

High K

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Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO$_{2}$/SiO$_{2}$ Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pb02 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PB02 ◽

Cited By ~ 1

Author(s):

Takeo Matsuki ◽

Ranga Hettiarachchi ◽

Wei Feng ◽

Kenji Shiraishi ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Nitrogen Incorporation

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Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc20 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC20 ◽

Cited By ~ 1

Author(s):

Cheng-Wen Kuo ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Yao-Tsung Huang ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Noise Performance ◽

Low Frequency Noise ◽

Strained Si

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Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc20 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC20

Author(s):

Cheng-Wen Kuo ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Yao-Tsung Huang ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Noise Performance ◽

Low Frequency Noise ◽

Strained Si

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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