Transient behaviors in partially depleted thin film SOI devices

2002 ◽  
Author(s):  
H.C. Shin ◽  
I.S. Lim ◽  
M. Racanelli ◽  
W.M. Huang ◽  
J. Foerstner ◽  
...  
Keyword(s):  
Thin Film ◽  
Soi Devices

scholarly journals Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

1999 ◽  
Vol 46 (5) ◽  
pp. 1036-1041 ◽  
Author(s):  
Shengdong Zhang ◽  
J.K.O. Sin ◽  
T.M.L. Lai ◽  
P.K. Ko
Keyword(s):  
Thin Film ◽  
Numerical Modeling ◽  
High Voltage ◽  
Soi Devices ◽  
Doping Profiles

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

1996 ◽  
Vol 43 (2) ◽  
pp. 318-325 ◽  
Author(s):  
H.C. Shin ◽  
Ik-Sung Lim ◽  
M. Racanelli ◽  
Wen-Ling Margaret Huang ◽  
J. Foerstner ◽  
...  
Keyword(s):  
Thin Film ◽  
Floating Body ◽  
Soi Devices

Determination of film and surface recombination in thin-film SOI devices using gated-diode technique

2004 ◽  
Vol 48 (3) ◽  
pp. 389-399 ◽  
Author(s):  
T. Rudenko ◽  
A. Rudenko ◽  
V. Kilchytska ◽  
S. Cristoloveanu ◽  
T. Ernst ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Recombination ◽  
Soi Devices

Isolation process dependence of channel mobility in thin-film SOI devices

1996 ◽  
Vol 17 (6) ◽  
pp. 291-293 ◽  
Author(s):  
Cheng-Liang Huang ◽  
H. Soleimani ◽  
G. Grula ◽  
N.D. Arora ◽  
D. Antoniadis
Keyword(s):  
Thin Film ◽  
Channel Mobility ◽  
Soi Devices

LOCOS-induced stress effects on thin-film SOI devices

1997 ◽  
Vol 44 (4) ◽  
pp. 646-650 ◽  
Author(s):  
Cheng-Liang Huang ◽  
H.R. Soleimani ◽  
G.J. Grula ◽  
J.W. Sleight ◽  
A. Villani ◽  
...  
Keyword(s):  
Thin Film ◽  
Stress Effects ◽  
Induced Stress ◽  
Soi Devices

Study on titanium salicide process for thin-film SOI devices

1997 ◽  
Vol 33 (1-4) ◽  
pp. 189-194 ◽  
Author(s):  
Jian Chen ◽  
Jean-Pierre Colinge
Keyword(s):  
Thin Film ◽  
Soi Devices
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