On the optimization of silicon film thickness in thin-film SOI devices

2003 ◽  
Author(s):  
J.-P. Colinge ◽  
M. Tack
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Silicon Film ◽  
Soi Devices

Impact of Silicon Film Thickness on LF Noise in SOI Devices

2006 ◽  
Author(s):  
Leily Zafari ◽  
Jalal Jomaah ◽  
Gerard Ghibaudo
Keyword(s):  
Film Thickness ◽  
Silicon Film ◽  
Soi Devices

scholarly journals Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths

2011 ◽  
Vol 6 (2) ◽  
pp. 107-113
Author(s):  
Michelly De Souza ◽  
Olivier Bulteel ◽  
Denis Flandre ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Numerical Simulations ◽  
Silicon Film ◽  
Ultra Violet ◽  
Experimental Measurements ◽  
Two Dimensional ◽  
Temperature Influence ◽  
Pin Photodiodes ◽  
Physical Phenomena

This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.

scholarly journals CHARGE-COUPLING EFFECT IN A HALL FIELD ELEMENT BASED ON THIN-FILM SOI-MOS TRANSISTOR

2020 ◽  
Author(s):  
Dmitry Ivanov ◽  
Aleksey Leonov ◽  
Victor Murashev
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Coupling Effect ◽  
Silicon Film ◽  
Double Gate ◽  
Mos Transistor ◽  
Magnetic Sensitivity ◽  
Field Element

The Article shows that the effect of charge coupling between the gates of SOI MOS field-effect transistors is also observed in double-gate transistor magnetosensitive Hall-type elements with a silicon film thickness of about 200 nm. It has been determined that in such sensitive elements operating in the electron enrichment mode near the Si-SiO2 interfaces, the effect of charge coupling makes it possible to increase the magnetic sensitivity.

Organic thin film thickness-dependent photocurrents polarity in graphene heterojunction phototransistor

Carbon ◽  
2021 ◽  
Vol 178 ◽  
pp. 506-514
Author(s):  
Meiyu He ◽  
Jiayue Han ◽  
Xingwei Han ◽  
Jun Gou ◽  
Ming Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Organic Thin Film ◽  
Thin Film Thickness

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control
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