3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282840 ◽

2006 ◽

Cited By ~ 4

Author(s):

Andrea Ghetti ◽

Denis Rideau

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Quantum Mechanical ◽

Strain Effects ◽

3D Monte Carlo ◽

Nanowire Mosfets ◽

Monte Carlo Device Simulation

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Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution

Solid-State Electronics ◽

10.1016/s0038-1101(02)00042-4 ◽

2002 ◽

Vol 46 (7) ◽

pp. 1061-1067 ◽

Cited By ~ 19

Author(s):

S. Barraud ◽

P. Dollfus ◽

S. Galdin ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Long Range ◽

Short Range ◽

Device Simulation ◽

Impurity Distribution ◽

Coulomb Interactions ◽

3D Monte Carlo ◽

Monte Carlo Device Simulation

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A quantum correction based on schrodinger equation applied to Monte Carlo device simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.809431 ◽

2003 ◽

Vol 50 (2) ◽

pp. 440-446 ◽

Cited By ~ 89

Author(s):

B. Winstead ◽

U. Ravaioli

Keyword(s):

Monte Carlo ◽

Schrödinger Equation ◽

Schrodinger Equation ◽

Quantum Correction ◽

Device Simulation ◽

Monte Carlo Device Simulation

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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

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Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

Journal of Computational Electronics ◽

10.1023/b:jcel.0000011406.20864.06 ◽

2003 ◽

Vol 2 (2-4) ◽

pp. 97-103 ◽

Cited By ~ 11

Author(s):

Tatsuya Ezaki ◽

Philipp Werner ◽

Masami Hane

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Quantum Mechanical ◽

Self Consistent

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Physical models of ohmic contact for Monte Carlo device simulation

Solid-State Electronics ◽

10.1016/0038-1101(95)00188-3 ◽

1996 ◽

Vol 39 (4) ◽

pp. 555-562 ◽

Cited By ~ 53

Author(s):

Tomás González ◽

Daniel Pardo

Keyword(s):

Monte Carlo ◽

Ohmic Contact ◽

Device Simulation ◽

Physical Models ◽

Monte Carlo Device Simulation

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An accurate and efficient surface scattering model for Monte Carlo device simulation

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436672 ◽

2005 ◽

Cited By ~ 2

Author(s):

D. Grgec ◽

C. Jungemann ◽

Chi Dong Nguyen ◽

B. Noinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Surface Scattering ◽

Scattering Model ◽

Monte Carlo Device Simulation

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MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034559 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Ghetti

Keyword(s):

Monte Carlo ◽

Silicon Oxide ◽

Device Simulation ◽

Gate Current ◽

Hot Carrier ◽

Self Consistent ◽

Monte Carlo Device Simulation

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Three dimemsional electro-thermal coupled Monte Carlo device simulation

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021520 ◽

2014 ◽

Author(s):

Xiaoyan Liu ◽

Kangliang Wei ◽

Longxiang Yin ◽

Gang Du ◽

Hai Jiang ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Monte Carlo Device Simulation

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The effective conduction-band edge method of quantum correction to the Monte Carlo device simulation

Electrical Performance of Electronic Packaging IWCE-04 ◽

10.1109/iwce.2004.1407394 ◽

2004 ◽

Author(s):

Bo Wu ◽

Ting-wei Tang

Keyword(s):

Monte Carlo ◽

Conduction Band ◽

Quantum Correction ◽

Device Simulation ◽

Band Edge ◽

Conduction Band Edge ◽

Edge Method ◽

Monte Carlo Device Simulation ◽

Effective Conduction Band Edge

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An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869964 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Barraud ◽

P. Dollfus ◽

S. Galdin ◽

R. Rengel ◽

M.J. Martin ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Impurity Scattering ◽

Impurity Distribution ◽

Scattering Model ◽

Monte Carlo Device Simulation

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