Minority‐carrier extraction and accumulation near metal‐semiconductor interfaces

1981 ◽  
Vol 52 (11) ◽  
pp. 6723-6728 ◽  
Author(s):  
S. Rahimi ◽  
J.‐C. Manifacier ◽  
H. K. Henisch
Keyword(s):  
Minority Carrier ◽  
Semiconductor Interfaces ◽  
Carrier Extraction

Computer Modeling of MWIR Homojunction Photodetector Based on Indium Antimonide

2011 ◽  
Vol 383-390 ◽  
pp. 6806-6810 ◽  
Author(s):  
M. Nadimi ◽  
A. Sadr
Keyword(s):  
Indium Antimonide ◽  
Thermal Noise ◽  
Minority Carrier ◽  
Spectral Response ◽  
Energy Band Diagram ◽  
Doping Profile ◽  
Zero Bias ◽  
Electric Field Profile ◽  
Area Product ◽  
Carrier Extraction

High operating temperatures infrared photodetectors are needed for improving the performance of existing military and civilian infrared systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an InSb extraction diode was studied and simulated for operation in the MWIR region. The simulation was performed using ATLAS device simulator from SILVACO®. The energy band diagram, doping profile, electric field profile, dark current and spectral response were calculated as a function of device thickness, applied reverse voltage and operating wavelength. The simulated photodetector exhibited a zero bias resistance-area product, R0A = 1.6×〖10〗^(-3) Ω〖.cm〗^2 at 240K.

Minority Carrier Extraction in Germanium

1955 ◽  
Vol 100 (4) ◽  
pp. 1047-1055 ◽  
Author(s):  
Ralph Bray
Keyword(s):  
Minority Carrier ◽  
Carrier Extraction

scholarly journals Nickel Oxide Particles Catalyze Photochemical Hydrogen Evolution from Water—Nanoscaling Promotes P-Type Character and Minority Carrier Extraction

ACS Nano ◽  
2015 ◽  
Vol 9 (5) ◽  
pp. 5135-5142 ◽  
Author(s):  
Benjamin A. Nail ◽  
Jorie M. Fields ◽  
Jing Zhao ◽  
Jiarui Wang ◽  
Matthew J. Greaney ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Hydrogen Evolution ◽  
Minority Carrier ◽  
Oxide Particles ◽  
Type Character ◽  
P Type ◽  
Carrier Extraction

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors

2015 ◽  
Vol 44 (9) ◽  
pp. 3036-3043 ◽  
Author(s):  
David Z.-Y. Ting ◽  
Alexander Soibel ◽  
Linda Höglund ◽  
Sarath D. Gunapala
Keyword(s):  
Infrared Detectors ◽  
Minority Carrier ◽  
Unipolar Barrier ◽  
Carrier Extraction

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

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