Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

Journal of Materials Chemistry C ◽

10.1039/d0tc04840b ◽

2021 ◽

Author(s):

Minu Mathew ◽

Chandra Sekhar Rout

Keyword(s):

Gas Sensing ◽

2D Materials ◽

Schottky Diodes ◽

High Sensitivity ◽

Future Perspectives ◽

Working Temperature ◽

Emerging Trends ◽

Gas Sensing Properties ◽

Recent Developments ◽

Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

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Schottky diodes as a possible supplementary method for ionic transport investigations in semiconducting ionic solids — application to n-CdF2

Journal de Physique ◽

10.1051/jphys:01983004404055300 ◽

1983 ◽

Vol 44 (4) ◽

pp. 553-558

Author(s):

R.J. Iwanowski ◽

A. Lemańska-Bajorek ◽

J.M. Langer

Keyword(s):

Schottky Diodes ◽

Ionic Transport ◽

Supplementary Method ◽

Ionic Solids

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Methodology for Analysis of Schottky Diode Failures

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0449 ◽

2010 ◽

Author(s):

Bhanu P. Sood ◽

Michael Pecht ◽

John Miker ◽

Tom Wanek

Keyword(s):

Failure Mode ◽

Schottky Diode ◽

Failure Modes ◽

Schottky Diodes ◽

Failure Mechanisms ◽

Forward Voltage ◽

Fast Switching ◽

Voltage Drops ◽

The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

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The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0231 ◽

2000 ◽

Author(s):

Mark Morris ◽

James Mohr ◽

Esteban Ortiz ◽

Steven Englebretson

Keyword(s):

Failure Mechanism ◽

Schottky Diodes ◽

Tetramethylammonium Hydroxide ◽

Novel Approach ◽

Failure Location ◽

Metal Etching ◽

Plastic Mold

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

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