Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique

2005 ◽  
Author(s):  
W.S. Lau ◽  
C.H. Goo ◽  
T.C. Chong
Keyword(s):  
Gallium Arsenide ◽  
Quantitative Analysis ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Bias Voltage ◽  
Molecular Beam ◽  
Transient Current ◽  
Spectroscopy Technique ◽  
Electron Traps ◽  
Voltage Transient

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

1998 ◽  
Vol 32 (10) ◽  
pp. 1036-1039 ◽  
Author(s):  
V. V. Chaldyshev ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
B. R. Semyagin ◽  
N. A. Bert ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

2006 ◽  
Vol 40 (7) ◽  
pp. 758-762 ◽  
Author(s):  
A. V. Boĭtsov ◽  
N. A. Bert ◽  
Yu. G. Musikhin ◽  
V. V. Chaldyshev ◽  
M. A. Yagovkina ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Cluster Formation ◽  
Isovalent Doping

Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy

1992 ◽  
Vol 60 (16) ◽  
pp. 2005-2007 ◽  
Author(s):  
L.‐W. Yin ◽  
J. P. Ibbetson ◽  
M. M. Hashemi ◽  
A. C. Gossard ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Electronic Properties ◽  
Molecular Beam

Low‐temperature molecular beam epitaxy of gallium arsenide

1987 ◽  
Vol 50 (11) ◽  
pp. 694-695 ◽  
Author(s):  
M. Missous ◽  
K. E. Singer
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam
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