In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy

1996 ◽  
Vol 14 (3) ◽  
pp. 2278 ◽  
Author(s):  
Kurt G. Eyink
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Spectroscopic Investigation ◽  
Molecular Beam ◽  
Ex Situ

Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy

1992 ◽  
Vol 60 (16) ◽  
pp. 2005-2007 ◽  
Author(s):  
L.‐W. Yin ◽  
J. P. Ibbetson ◽  
M. M. Hashemi ◽  
A. C. Gossard ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Electronic Properties ◽  
Molecular Beam

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Strain relaxation of the In0.53Ga0.47As epi-layer grown on a Si substrate using molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (46) ◽  
pp. 10721-10727 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Yunfang Guan ◽  
Jingling Li ◽  
Xiaona Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Si Substrate ◽  
Structural Perfection ◽  
High Degree

The as-grown In0.53Ga0.47As epi-layer grown on Si substrate by using low-temperature In0.4Ga0.6As buffer layer with in-situ annealing is of a high degree of structural perfection.

Ge Nanocrystals Grown on Si(111) by Molecular Beam Epitaxy with and without CaF2 Buffer Layers

1994 ◽  
Vol 358 ◽  
Author(s):  
Peter W. Deelman ◽  
Thomas Thundat ◽  
Leo J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Ex Situ ◽  
Rheed Pattern ◽  
Island Growth ◽  
Clustering Behavior ◽  
Ge Nanocrystals

ABSTRACTThe Stranski-Krastanov growth mode of Ge thin films on Si and the clustering behavior of Ge on calcium fluoride have been exploited to grow self-assembled nanocrystals by molecular beam epitaxy. The growth of the samples was monitored in situ with RHEED, and they were analyzed ex situ with AFM and RBS. For each system (Ge/Si and Ge/CaF2/Si), the dependence of Ge islanding on substrate temperature and on substrate misorientation was studied. When grown on Si(111) at temperatures between 500°C and 700°C, Ge clusters nucleated at step edges on vicinal wafers and nucleated homogeneously on on-axis wafers. Above 600°C, no transition to a spotty RHEED pattern, which would be expected for island growth, was observed for the vicinal samples. Ge grown at 500°C on on-axis Si(111) formed islands with a relatively narrow size distribution, typically 160nm in diameter and 10nm to 20nm in height. When grown on a CaF2 buffer layer, Ge islands nucleated homogeneously at a substrate temperature of 750°C, resulting in randomly distributed, oblate crystallites approximately 100nm to 200nm in diameter. At 650°C and 700°C, although we still observed many randomly distributed, small crystallites, most islands nucleated at step bunches and had a length scale of over 500nm.

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