Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide

1998 ◽  
Vol 83 (11) ◽  
pp. 5845-5851 ◽  
Author(s):  
S. Muthuvenkatraman ◽  
Suresh Gorantla ◽  
Rama Venkat ◽  
Donald L. Dorsey
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Theoretical Study ◽  
Arsenic Incorporation ◽  
Antisite Arsenic

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

1998 ◽  
Vol 32 (10) ◽  
pp. 1036-1039 ◽  
Author(s):  
V. V. Chaldyshev ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
B. R. Semyagin ◽  
N. A. Bert ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

2006 ◽  
Vol 40 (7) ◽  
pp. 758-762 ◽  
Author(s):  
A. V. Boĭtsov ◽  
N. A. Bert ◽  
Yu. G. Musikhin ◽  
V. V. Chaldyshev ◽  
M. A. Yagovkina ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Cluster Formation ◽  
Isovalent Doping

Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling

1998 ◽  
Vol 27 (5) ◽  
pp. 472-478 ◽  
Author(s):  
S. Muthuvenkatraman ◽  
Suresh Gorantla ◽  
Rama Venkat ◽  
Donald L. Dorsey
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Arsenic Incorporation ◽  
Antisite Arsenic

Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy

1992 ◽  
Vol 60 (16) ◽  
pp. 2005-2007 ◽  
Author(s):  
L.‐W. Yin ◽  
J. P. Ibbetson ◽  
M. M. Hashemi ◽  
A. C. Gossard ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Electronic Properties ◽  
Molecular Beam
Sign in / Sign up

Export Citation Format

Share Document