Tensile Testing of Single Crystal Silicon Thin Films at 800°C using IR Heating

2007 ◽  
Author(s):  
T. Ikeda ◽  
K. Sugano ◽  
T. Tsuchiya ◽  
O. Tabata
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Ir Heating

Low cycle fatigue of single crystal silicon thin films

2007 ◽  
Vol 140 (2) ◽  
pp. 257-265 ◽  
Author(s):  
Hsien-Kuang Liu ◽  
B.J. Lee ◽  
Pang-Ping Liu
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Low Cycle Fatigue ◽  
Single Crystal Silicon ◽  
Cycle Fatigue ◽  
Crystal Silicon ◽  
Silicon Thin Films

Influence of sub-micrometer notches on the fracture of single crystal silicon thin films

2007 ◽  
Vol 30 (12) ◽  
pp. 1172-1181 ◽  
Author(s):  
X. LI ◽  
T. KASAI ◽  
S. NAKAO ◽  
T. ANDO ◽  
M. SHIKIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Thin Films

Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers

Soft Matter ◽  
2017 ◽  
Vol 13 (41) ◽  
pp. 7625-7632 ◽  
Author(s):  
Yu Wang ◽  
Kai Yu ◽  
H. Jerry Qi ◽  
Jianliang Xiao
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Shape Memory ◽  
Single Crystal Silicon ◽  
Shape Memory Polymers ◽  
Temperature Dependent ◽  
Crystal Silicon ◽  
Silicon Thin Films

Enabled by shape memory polymers (SMPs), time and temperature dependent wrinkling of single-crystal silicon thin films is demonstrated.

Electronic Defects in Transient, Thermally Processed Semiconductors

1984 ◽  
Vol 35 ◽  
Author(s):  
N.M. Johnson
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Thermally Processed ◽  
Electronic Defect ◽  
Electronic Defects

ABSTRACTThis paper summarizes the general observations that may be drawn from numerous studies of electronic defects in transient thermally annealed bulk single – crystal silicon and discusses the emerging subjects of electronic defect evaluation in beam – crystallized silicon thin films and in epitaxially – grown III – V semiconductors.

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