Electronic Defects in Transient, Thermally Processed Semiconductors

1984 ◽  
Vol 35 ◽  
Author(s):  
N.M. Johnson

ABSTRACTThis paper summarizes the general observations that may be drawn from numerous studies of electronic defects in transient thermally annealed bulk single – crystal silicon and discusses the emerging subjects of electronic defect evaluation in beam – crystallized silicon thin films and in epitaxially – grown III – V semiconductors.

1981 ◽  
Vol 4 ◽  
Author(s):  
N. M. Johnson

ABSTRACTDirected energy sources have been used to recrystallize implanted amorphous layers in bulk single - crystal silicon and to crystallize silicon thin films on insulating amorphous substrates. All investigated forms of beam annealing leave residual electronic defects in and near the recrystallized layer on bulk silicon, with densities in excess of those obtained by conventional furnace annealing. This paper summarizes the general observations that may be drawn from numerous experimental investigations of electronic defects in CW beam - recrystallized bulk silicon and affirms the timeliness of similar comprehensive studies of residual defects in crystallized - silicon thin films.


2007 ◽  
Vol 140 (2) ◽  
pp. 257-265 ◽  
Author(s):  
Hsien-Kuang Liu ◽  
B.J. Lee ◽  
Pang-Ping Liu

2007 ◽  
Vol 30 (12) ◽  
pp. 1172-1181 ◽  
Author(s):  
X. LI ◽  
T. KASAI ◽  
S. NAKAO ◽  
T. ANDO ◽  
M. SHIKIDA ◽  
...  

Soft Matter ◽  
2017 ◽  
Vol 13 (41) ◽  
pp. 7625-7632 ◽  
Author(s):  
Yu Wang ◽  
Kai Yu ◽  
H. Jerry Qi ◽  
Jianliang Xiao

Enabled by shape memory polymers (SMPs), time and temperature dependent wrinkling of single-crystal silicon thin films is demonstrated.


Sign in / Sign up

Export Citation Format

Share Document