Electronic Defects in Transient, Thermally Processed
Semiconductors
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ABSTRACTThis paper summarizes the general observations that may be drawn from numerous studies of electronic defects in transient thermally annealed bulk single – crystal silicon and discusses the emerging subjects of electronic defect evaluation in beam – crystallized silicon thin films and in epitaxially – grown III – V semiconductors.
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2007 ◽
Vol 140
(2)
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pp. 257-265
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2007 ◽
Vol 30
(12)
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pp. 1172-1181
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2001 ◽
Vol 10
(4)
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pp. 593-600
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2005 ◽
1990 ◽
Vol 19
(10)
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pp. 1043-1050
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2002 ◽
Vol 11
(1)
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pp. 91-91
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